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| Auteurs principaux: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2510.11881 |
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- The growing demand for more efficient data transmission has made nanoscale high-throughput all-optical switching a critical requirement in modern telecommunication systems. Metasurface-based platforms offer unique advantages because of their compact design, energy efficiency, and the ability to precisely manipulate light at the subwavelength scale, in a contact-less fashion. However, achieving both high transmission modulation and low optical loss in the telecom band remains a challenge. This study develops monolithic and hybrid metasurfaces based on the phase change material antimony trisulfide (Sb$_2$S$_3$) to address this limitation. First, we demonstrate the capability of Sb$_2$S$_3$ to offer up to ~91 percent modulation, even with a magnetic dipole - a low-Q resonance. It lifts the requirement for complex precisely fabricated metasurfaces, a long-standing limitation in the community for all optical switching. Furthermore, with the most straightforward hybridisation approach, i.e. depositing a thin film of silicon, we improved the simulated modulation depth to 99 percent. Experimentally, over 80 percent modulation was achieved for both hybrid and monolithic structures, with nearly 2-fold less power required for switching in the hybrid design whilst maintaining high modulation depth. This performance results from the significant refractive index tunability of Sb$_2$S$_3$ and its intrinsically low optical loss (k < 10^{-4}) in the telecom band, further enhanced by silicon integration. The demonstrated metasurfaces offer an effective and scalable approach for all-optical light modulation with strong potential for integration into CMOS-compatible photonic circuits and next-generation telecommunications systems.