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Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Tran, Dat Q., Kim, Minho, Nam, Okhyun, Darakchieva, Vanya, Paskov, Plamen P.
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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