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| Format: | Preprint |
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2025
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| Online-Zugang: | https://arxiv.org/abs/2510.12473 |
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| _version_ | 1866911477593538560 |
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| author | Peng, Run-Jie Wang, Xing-Yu Yuan, Jun-Hui Yu, Nian-Nian Xue, Kan-Hao Wang, Jiafu Zhang, Pan |
| author_facet | Peng, Run-Jie Wang, Xing-Yu Yuan, Jun-Hui Yu, Nian-Nian Xue, Kan-Hao Wang, Jiafu Zhang, Pan |
| contents | High-performance, low-power transistors are core components of advanced integrated circuits, and the ultimate limitation of Moore's law has made the search for new alternative pathways an urgent priority. Two-dimensional (2D) materials have become the most promising exploration target due to their exceptional electronic properties and scalability. In this work, we conducted device transport research on the previously proposed 2D quaternary semiconductor Na2LiAlP2 using the non-equilibrium Green's function method. The results demonstrate that even with a channel length of 5 nm, Na2LiAlP2 still exhibits excellent n-type transistor characteristics, fully meeting and surpassing the technical specifications outlined in the International Roadmap for Devices and Systems (IRDS). Encouragingly, the device can easily achieve the required on-state current of 900 μA/μm under low operating voltages of 0.1 V and 0.2 V. Moreover, at 0.1 V operating voltage, the device's subthreshold swing breaks through the theoretical limit of 60 mV/dec, reaching an astonishing value 30.33 mV/dec. Additionally, its p-type transistor performance also stands out with a subthreshold swing of ~50 mV/dec when the channel length is 7 nm. Our research not only showcases the exceptional transistor properties of Na2LiAlP2 but also further expands the research scope of 2D high-performance transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_12473 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Two-Dimensional Na2LiAlP2 Crystal for High-Performance Field-Effect Transistors Peng, Run-Jie Wang, Xing-Yu Yuan, Jun-Hui Yu, Nian-Nian Xue, Kan-Hao Wang, Jiafu Zhang, Pan Materials Science High-performance, low-power transistors are core components of advanced integrated circuits, and the ultimate limitation of Moore's law has made the search for new alternative pathways an urgent priority. Two-dimensional (2D) materials have become the most promising exploration target due to their exceptional electronic properties and scalability. In this work, we conducted device transport research on the previously proposed 2D quaternary semiconductor Na2LiAlP2 using the non-equilibrium Green's function method. The results demonstrate that even with a channel length of 5 nm, Na2LiAlP2 still exhibits excellent n-type transistor characteristics, fully meeting and surpassing the technical specifications outlined in the International Roadmap for Devices and Systems (IRDS). Encouragingly, the device can easily achieve the required on-state current of 900 μA/μm under low operating voltages of 0.1 V and 0.2 V. Moreover, at 0.1 V operating voltage, the device's subthreshold swing breaks through the theoretical limit of 60 mV/dec, reaching an astonishing value 30.33 mV/dec. Additionally, its p-type transistor performance also stands out with a subthreshold swing of ~50 mV/dec when the channel length is 7 nm. Our research not only showcases the exceptional transistor properties of Na2LiAlP2 but also further expands the research scope of 2D high-performance transistors. |
| title | Two-Dimensional Na2LiAlP2 Crystal for High-Performance Field-Effect Transistors |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.12473 |