Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts

Fuente: arXiv
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Autores principales: Hudson, Karina, Costa, Davide, Esposti, Davide Degli, Stehouwer, Lucas E. A., Scappucci, Giordano
Formato: Preprint
Publicado: 2025
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author Hudson, Karina
Costa, Davide
Esposti, Davide Degli
Stehouwer, Lucas E. A.
Scappucci, Giordano
author_facet Hudson, Karina
Costa, Davide
Esposti, Davide Degli
Stehouwer, Lucas E. A.
Scappucci, Giordano
contents Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantised conductance increasing in multiples of $e^2/h$ down to the first integer filling factor $ν=1$. These results establish strained germanium as a viable platform for complex experiments probing many-body states and quantum phase transitions.
format Preprint
id arxiv_https___arxiv_org_abs_2510_12554
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts
Hudson, Karina
Costa, Davide
Esposti, Davide Degli
Stehouwer, Lucas E. A.
Scappucci, Giordano
Mesoscale and Nanoscale Physics
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantised conductance increasing in multiples of $e^2/h$ down to the first integer filling factor $ν=1$. These results establish strained germanium as a viable platform for complex experiments probing many-body states and quantum phase transitions.
title Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2510.12554