Emergent spin Hall quantization and high-order van Hove singularities in square-octagonal MA$_2$Z$_4$
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arXiv
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| Auteurs principaux: | , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866911210984701952 |
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| author | Verma, Rahul Vardhan, Yash Lin, Hsin Singh, Bahadur |
| author_facet | Verma, Rahul Vardhan, Yash Lin, Hsin Singh, Bahadur |
| contents | Quantum spin Hall (QSH) insulators are versatile platforms for exploring exotic quantum phases, especially when combined with high-order van Hove singularities (VHSs) that enhance electron correlations. However, perfect spin Hall quantization is often hindered by spin mixing from strong spin-orbit coupling, and the emergence of such VHSs is highly sensitive to material-specific electronic structures. Here, we predict a class of seven-layered square-octagonal MA$_2$Z$_4$ (M = Mo/W, A = Si/Ge, Z = Pnictogen) isomers that host a robust, large-gap QSH phase with nearly quantized spin Hall conductivity and intrinsic high-order VHSs. Topological and symmetry analyses reveal that compounds with Z = P, As, and Sb are $\mathbb{Z}_2$ nontrivial with spin Chern number $C_s = 1$ and support $S_z$-polarized edge states, while those with Z = N are trivial insulators. The QSH phase features an $S_z$-conserving spin Hamiltonian consistent with an emergent spin $\mathrm{U}(1)$ quasi-symmetry, yielding spin Hall conductivity $\sim 2e^2/h$. Notably, MA$_2$(As, Sb)$_4$ compounds exhibit quasi-flat bands near the Fermi level in the inverted regime, with WSi$_2$Sb$_4$ additionally hosting four high-order VHSs at generic momentum points. These results position square-octagonal MA$_2$Z$_4$ materials as robust QSH insulators for realizing quantized spin Hall conductivity and correlated topological phases, including fractionalized states and possibly non-Abelian anyons. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_12935 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Emergent spin Hall quantization and high-order van Hove singularities in square-octagonal MA$_2$Z$_4$ Verma, Rahul Vardhan, Yash Lin, Hsin Singh, Bahadur Materials Science Quantum spin Hall (QSH) insulators are versatile platforms for exploring exotic quantum phases, especially when combined with high-order van Hove singularities (VHSs) that enhance electron correlations. However, perfect spin Hall quantization is often hindered by spin mixing from strong spin-orbit coupling, and the emergence of such VHSs is highly sensitive to material-specific electronic structures. Here, we predict a class of seven-layered square-octagonal MA$_2$Z$_4$ (M = Mo/W, A = Si/Ge, Z = Pnictogen) isomers that host a robust, large-gap QSH phase with nearly quantized spin Hall conductivity and intrinsic high-order VHSs. Topological and symmetry analyses reveal that compounds with Z = P, As, and Sb are $\mathbb{Z}_2$ nontrivial with spin Chern number $C_s = 1$ and support $S_z$-polarized edge states, while those with Z = N are trivial insulators. The QSH phase features an $S_z$-conserving spin Hamiltonian consistent with an emergent spin $\mathrm{U}(1)$ quasi-symmetry, yielding spin Hall conductivity $\sim 2e^2/h$. Notably, MA$_2$(As, Sb)$_4$ compounds exhibit quasi-flat bands near the Fermi level in the inverted regime, with WSi$_2$Sb$_4$ additionally hosting four high-order VHSs at generic momentum points. These results position square-octagonal MA$_2$Z$_4$ materials as robust QSH insulators for realizing quantized spin Hall conductivity and correlated topological phases, including fractionalized states and possibly non-Abelian anyons. |
| title | Emergent spin Hall quantization and high-order van Hove singularities in square-octagonal MA$_2$Z$_4$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.12935 |