Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
Fuente:
arXiv
Saved in:
| Main Authors: | Samadi, Saeed, Cywiński, Łukasz, Krzywda, Jan A. |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
by: Kępa, Marcin, et al.
Published: (2023)
by: Kępa, Marcin, et al.
Published: (2023)
Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
by: Kępa, Marcin, et al.
Published: (2023)
by: Kępa, Marcin, et al.
Published: (2023)
Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
by: Krzywda, Jan A., et al.
Published: (2024)
by: Krzywda, Jan A., et al.
Published: (2024)
g-tensor Optimization in Ge/SiGe Quantum Dots
by: Shojaei, Aram, et al.
Published: (2026)
by: Shojaei, Aram, et al.
Published: (2026)
Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
by: Struck, Tom, et al.
Published: (2023)
by: Struck, Tom, et al.
Published: (2023)
On-chip cryogenic multiplexing of Si/SiGe quantum devices
by: Wolfe, M. A., et al.
Published: (2024)
by: Wolfe, M. A., et al.
Published: (2024)
High-fidelity EDSR in Si/SiGe Wiggle Wells
by: Soomro, Hudaiba, et al.
Published: (2026)
by: Soomro, Hudaiba, et al.
Published: (2026)
Active Noise Reduction in Si/SiGe Gated Quantum Dots
by: Bharadwaj, Rajat, et al.
Published: (2025)
by: Bharadwaj, Rajat, et al.
Published: (2025)
Characterization of individual charge fluctuators in Si/SiGe quantum dots
by: Ye, Feiyang, et al.
Published: (2024)
by: Ye, Feiyang, et al.
Published: (2024)
Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots
by: Jacobson, N. Tobias, et al.
Published: (2026)
by: Jacobson, N. Tobias, et al.
Published: (2026)
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
by: Németh, Róbert, et al.
Published: (2024)
by: Németh, Róbert, et al.
Published: (2024)
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
by: Beer, Max, et al.
Published: (2026)
by: Beer, Max, et al.
Published: (2026)
Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
by: Ye, Feiyang, et al.
Published: (2024)
by: Ye, Feiyang, et al.
Published: (2024)
Control of threshold voltages in Si/SiGe quantum devices via optical illumination
by: Wolfe, M. A., et al.
Published: (2023)
by: Wolfe, M. A., et al.
Published: (2023)
Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex
by: Woods, Benjamin D., et al.
Published: (2025)
by: Woods, Benjamin D., et al.
Published: (2025)
Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
by: Benson, Jared, et al.
Published: (2026)
by: Benson, Jared, et al.
Published: (2026)
Multi-level charge fluctuations in a Si/SiGe double quantum dot device
by: Albrecht, Dylan, et al.
Published: (2026)
by: Albrecht, Dylan, et al.
Published: (2026)
Smooth velocity shuttling for suppressing valley excitations in disordered Si/SiGe quantum dots
by: Nagai, Ryo, et al.
Published: (2026)
by: Nagai, Ryo, et al.
Published: (2026)
Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
by: Roux, Marc-Antoine, et al.
Published: (2025)
by: Roux, Marc-Antoine, et al.
Published: (2025)
Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
by: Sommer, L., et al.
Published: (2026)
by: Sommer, L., et al.
Published: (2026)
g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects
by: Woods, Benjamin D., et al.
Published: (2024)
by: Woods, Benjamin D., et al.
Published: (2024)
Singlet-triplet oscillations in multivalley Si double quantum dots
by: Cywiński, Łukasz, et al.
Published: (2026)
by: Cywiński, Łukasz, et al.
Published: (2026)
Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
by: Woods, Benjamin D., et al.
Published: (2023)
by: Woods, Benjamin D., et al.
Published: (2023)
Benchmarking low-power flopping-mode spin qubit fidelities in Si/SiGe devices with alloy disorder
by: Young, Steve M., et al.
Published: (2025)
by: Young, Steve M., et al.
Published: (2025)
Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
by: Cakar, Efe, et al.
Published: (2024)
by: Cakar, Efe, et al.
Published: (2024)
Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
by: Xue, Ran, et al.
Published: (2023)
by: Xue, Ran, et al.
Published: (2023)
Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
by: Thayil, Abel, et al.
Published: (2024)
by: Thayil, Abel, et al.
Published: (2024)
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
by: Losert, Merritt P., et al.
Published: (2023)
by: Losert, Merritt P., et al.
Published: (2023)
Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
by: Severin, B., et al.
Published: (2021)
by: Severin, B., et al.
Published: (2021)
Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
by: Song, Younguk, et al.
Published: (2023)
by: Song, Younguk, et al.
Published: (2023)
Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
by: Brooks, Matthew, et al.
Published: (2024)
by: Brooks, Matthew, et al.
Published: (2024)
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
by: Thayil, Abel, et al.
Published: (2025)
by: Thayil, Abel, et al.
Published: (2025)
Limitations on the maximal level of entanglement of two singlet-triplet qubits in GaAs quantum dots
by: Bragar, Igor, et al.
Published: (2023)
by: Bragar, Igor, et al.
Published: (2023)
Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
by: Dick, Daniel, et al.
Published: (2026)
by: Dick, Daniel, et al.
Published: (2026)
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
by: Stehouwer, Lucas E. A., et al.
Published: (2025)
by: Stehouwer, Lucas E. A., et al.
Published: (2025)
Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices
by: Borovkov, M., et al.
Published: (2026)
by: Borovkov, M., et al.
Published: (2026)
Low-loss frequency-tunable Josephson junction array cavities on Ge/SiGe heterostructures with a tapered etching approach
by: De Palma, Franco, et al.
Published: (2025)
by: De Palma, Franco, et al.
Published: (2025)
Electron g-factor of strained Ge caused by the SiGe substrate and its dependence on growth directions
by: Imakire, K., et al.
Published: (2024)
by: Imakire, K., et al.
Published: (2024)
Exact Multi-Valley Envelope Function Theory of Valley Splitting in Si/SiGe Nanostructures
by: Ermoneit, Lasse, et al.
Published: (2026)
by: Ermoneit, Lasse, et al.
Published: (2026)
QDarts: A Quantum Dot Array Transition Simulator for finding charge transitions in the presence of finite tunnel couplings, non-constant charging energies and sensor dots
by: Krzywda, Jan A., et al.
Published: (2024)
by: Krzywda, Jan A., et al.
Published: (2024)
Similar Items
-
Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
by: Kępa, Marcin, et al.
Published: (2023) -
Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
by: Kępa, Marcin, et al.
Published: (2023) -
Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
by: Krzywda, Jan A., et al.
Published: (2024) -
g-tensor Optimization in Ge/SiGe Quantum Dots
by: Shojaei, Aram, et al.
Published: (2026) -
Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
by: Struck, Tom, et al.
Published: (2023)