Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors

Fuente: arXiv

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Bibliographic Details
Main Authors:	Pan, Ching-Yang, Lin, Shi-Kai, Chen, Yu-An, Jiang, Pei-hsun
Format:	Preprint
Published:	2025
Subjects:	Mesoscale and Nanoscale Physics Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2510.14456