Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866917018604666880 |
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| author | Pan, Ching-Yang Lin, Shi-Kai Chen, Yu-An Jiang, Pei-hsun |
| author_facet | Pan, Ching-Yang Lin, Shi-Kai Chen, Yu-An Jiang, Pei-hsun |
| contents | This work provides a detailed mapping of various mechanisms of surface-trap-induced gate leakage in GaN HEMTs across a temperature range from room to cryogenic levels. Two-dimensional variable-range hopping is observed at small gate bias. Under higher reverse gate bias, the leakage is dominated by the Poole--Frenkel emission above 220 K, but gradually transitions to the trap-assisted tunneling below 220 K owing to the frozen-trap effect. The trap barrier height extracted from the gate leakage current under the upward gate sweep is 0.65 V, which is 12\% higher than that from the downward sweep. The gate leakage current as a function of the gate bias exhibits clockwise hysteresis loops above 220 K but counterclockwise ones below 220 K. This remarkable opposite hysteresis phenomenon is thoroughly explained by the trap mechanisms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_14456 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors Pan, Ching-Yang Lin, Shi-Kai Chen, Yu-An Jiang, Pei-hsun Mesoscale and Nanoscale Physics Applied Physics This work provides a detailed mapping of various mechanisms of surface-trap-induced gate leakage in GaN HEMTs across a temperature range from room to cryogenic levels. Two-dimensional variable-range hopping is observed at small gate bias. Under higher reverse gate bias, the leakage is dominated by the Poole--Frenkel emission above 220 K, but gradually transitions to the trap-assisted tunneling below 220 K owing to the frozen-trap effect. The trap barrier height extracted from the gate leakage current under the upward gate sweep is 0.65 V, which is 12\% higher than that from the downward sweep. The gate leakage current as a function of the gate bias exhibits clockwise hysteresis loops above 220 K but counterclockwise ones below 220 K. This remarkable opposite hysteresis phenomenon is thoroughly explained by the trap mechanisms. |
| title | Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2510.14456 |