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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.14491 |
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| _version_ | 1866911214388379648 |
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| author | Kim, Gye-Hyeon Jung, Tae Hyun Sun, Seungjoon Lee, Jung Kyu Han, Jaewoo Kumari, P. Karuna Choi, Jin-Hyun Lee, Hansol Kim, Tae Heon Oh, Yoon Seok Chae, Seung Chul Park, Se Young Yang, Sang Mo Sohn, Changhee |
| author_facet | Kim, Gye-Hyeon Jung, Tae Hyun Sun, Seungjoon Lee, Jung Kyu Han, Jaewoo Kumari, P. Karuna Choi, Jin-Hyun Lee, Hansol Kim, Tae Heon Oh, Yoon Seok Chae, Seung Chul Park, Se Young Yang, Sang Mo Sohn, Changhee |
| contents | Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude switching at the mesoscopic scale in compositionally graded Ba1-xSrxTiO3 heterostructures, enabling continuous modulation of polarization magnitude without altering its direction, which we defined as amplitude switching. Using switching current measurement, piezoresponse force microscopy and Landau-Ginzburg-Devonshire simulations, we reveal that compositionally graded ferroelectric heterostructure can possess amplitude switching behavior through a double well potential with flattened minima. This behavior supports stable, continuous polarization states and establishes a new platform for analog memory applications. These findings introduce amplitude switching as a new dynamic of the order parameter, paving the way for energy-efficient and reliable analog memory systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_14491 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferroelectric amplitude switching and continuous memory Kim, Gye-Hyeon Jung, Tae Hyun Sun, Seungjoon Lee, Jung Kyu Han, Jaewoo Kumari, P. Karuna Choi, Jin-Hyun Lee, Hansol Kim, Tae Heon Oh, Yoon Seok Chae, Seung Chul Park, Se Young Yang, Sang Mo Sohn, Changhee Materials Science Strongly Correlated Electrons Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory states. In this work, we demonstrate ferroelectric amplitude switching at the mesoscopic scale in compositionally graded Ba1-xSrxTiO3 heterostructures, enabling continuous modulation of polarization magnitude without altering its direction, which we defined as amplitude switching. Using switching current measurement, piezoresponse force microscopy and Landau-Ginzburg-Devonshire simulations, we reveal that compositionally graded ferroelectric heterostructure can possess amplitude switching behavior through a double well potential with flattened minima. This behavior supports stable, continuous polarization states and establishes a new platform for analog memory applications. These findings introduce amplitude switching as a new dynamic of the order parameter, paving the way for energy-efficient and reliable analog memory systems. |
| title | Ferroelectric amplitude switching and continuous memory |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2510.14491 |