Wafer-Scale All-Dielectric quasi-BIC Metasurfaces: Bridging High-throughput Deep-UV Lithography with Nanophotonic Applications
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866917020991225856 |
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| author | Beisenova, Aidana Adi, Wihan Wu, Wenxin Biswas, Shovasis K Rosas, Samir Stamenic, Biljana John, Demis D. Yesilkoy, Filiz |
| author_facet | Beisenova, Aidana Adi, Wihan Wu, Wenxin Biswas, Shovasis K Rosas, Samir Stamenic, Biljana John, Demis D. Yesilkoy, Filiz |
| contents | High quality-factor (Q) dielectric metasurfaces operating in the visible to near-infrared range usually require sub-200 nm features, limiting their fabrication to expensive, low-throughput electron beam lithography. Here, we demonstrate wafer-scale metasurfaces fabricated using deep ultraviolet lithography (DUVL), a workhorse technology in the semiconductor industry. Using a radius and depth perturbation technique in a hole array patterned into a silicon nitride slab, we achieve quasi-bound states in the continuum (qBIC) resonances with measured Q-factors of 150. Critically, we introduce DUV exposure dose as a Q-factor engineering parameter and demonstrate how hole depth control circumvents DUVL resolution limits. Despite stochastic nanoscale variations, the fabricated metasurfaces exhibit spatial uniformity, a consequence of the nonlocal nature of the qBIC resonances. Proof of concept refractive index sensing demonstrates 129 nm/RIU sensitivity while maintaining simple CMOS camera-based resonance shift interrogation. This work bridges scalable semiconductor manufacturing with high-performance nanophotonics, establishing a practical pathway for commercializing metasurface-based sensors, on-chip spectrometers, and integrated photonic systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_15135 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Wafer-Scale All-Dielectric quasi-BIC Metasurfaces: Bridging High-throughput Deep-UV Lithography with Nanophotonic Applications Beisenova, Aidana Adi, Wihan Wu, Wenxin Biswas, Shovasis K Rosas, Samir Stamenic, Biljana John, Demis D. Yesilkoy, Filiz Optics High quality-factor (Q) dielectric metasurfaces operating in the visible to near-infrared range usually require sub-200 nm features, limiting their fabrication to expensive, low-throughput electron beam lithography. Here, we demonstrate wafer-scale metasurfaces fabricated using deep ultraviolet lithography (DUVL), a workhorse technology in the semiconductor industry. Using a radius and depth perturbation technique in a hole array patterned into a silicon nitride slab, we achieve quasi-bound states in the continuum (qBIC) resonances with measured Q-factors of 150. Critically, we introduce DUV exposure dose as a Q-factor engineering parameter and demonstrate how hole depth control circumvents DUVL resolution limits. Despite stochastic nanoscale variations, the fabricated metasurfaces exhibit spatial uniformity, a consequence of the nonlocal nature of the qBIC resonances. Proof of concept refractive index sensing demonstrates 129 nm/RIU sensitivity while maintaining simple CMOS camera-based resonance shift interrogation. This work bridges scalable semiconductor manufacturing with high-performance nanophotonics, establishing a practical pathway for commercializing metasurface-based sensors, on-chip spectrometers, and integrated photonic systems. |
| title | Wafer-Scale All-Dielectric quasi-BIC Metasurfaces: Bridging High-throughput Deep-UV Lithography with Nanophotonic Applications |
| topic | Optics |
| url | https://arxiv.org/abs/2510.15135 |