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Hauptverfasser: Narayanan, Pournima, Hamid, Rabeeya, Pucurimay, Linda, Lecina, Ona Segura, Carwithen, Ben P., Schopp, Jacob, Edwards, Justin S., Adeyeye, Oluwaseun Noah, Feng, Demeng, Hait, Diptarka, Martinez, Todd J., Schmidt, Timothy W., Nielsen, Michael P., Tayebjee, Murad J. Y., Kats, Mikhail A., Congreve, Daniel N.
Format: Preprint
Veröffentlicht: 2025
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2510.15184
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author Narayanan, Pournima
Hamid, Rabeeya
Pucurimay, Linda
Lecina, Ona Segura
Carwithen, Ben P.
Schopp, Jacob
Edwards, Justin S.
Adeyeye, Oluwaseun Noah
Feng, Demeng
Hait, Diptarka
Martinez, Todd J.
Schmidt, Timothy W.
Nielsen, Michael P.
Tayebjee, Murad J. Y.
Kats, Mikhail A.
Congreve, Daniel N.
author_facet Narayanan, Pournima
Hamid, Rabeeya
Pucurimay, Linda
Lecina, Ona Segura
Carwithen, Ben P.
Schopp, Jacob
Edwards, Justin S.
Adeyeye, Oluwaseun Noah
Feng, Demeng
Hait, Diptarka
Martinez, Todd J.
Schmidt, Timothy W.
Nielsen, Michael P.
Tayebjee, Murad J. Y.
Kats, Mikhail A.
Congreve, Daniel N.
contents Upconversion of low-energy photons to higher-energy photons provides an opportunity to surpass traditional limitations in fields such as 3D printing, photovoltaics, and photocatalysis. Triplet--triplet annihilation upconversion (TTA-UC) is particularly appealing for such applications as it can efficiently upconvert low-intensity, incoherent light. However, previously demonstrated thin-film TTA systems are simultaneously constrained by modest efficiencies and limited reach into the near infrared (NIR). Here, we design a single-layer thin-film bulk heterojunction that integrates PbS quantum dots (QDs) as tunable NIR absorbers within an organic semiconductor matrix of TES-ADT, achieving large anti-Stokes shifts up to 500 nm and high internal quantum efficiencies across the NIR-I and NIR-II windows (800-1200 nm). Through the incorporation of 5-tetracene carboxylic acid ligands on the PbS QD surface, the yield of sensitized triplets was boosted, as confirmed by transient absorption and time-resolved photoluminescence measurements. The resulting films demonstrated a 15-fold improvement in UC efficiency. Furthermore, we demonstrate visible imaging of incoherent 1200 nm light via thin-film TTA-UC at incident intensities at the imaging mask as low as 20 mWcm$^2$, marking a significant advance toward practical implementation of solid-state NIR-to-visible upconversion.
format Preprint
id arxiv_https___arxiv_org_abs_2510_15184
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Visible Imaging of Incoherent 1200-nm Light via Triplet--Triplet Annihilation Upconversion
Narayanan, Pournima
Hamid, Rabeeya
Pucurimay, Linda
Lecina, Ona Segura
Carwithen, Ben P.
Schopp, Jacob
Edwards, Justin S.
Adeyeye, Oluwaseun Noah
Feng, Demeng
Hait, Diptarka
Martinez, Todd J.
Schmidt, Timothy W.
Nielsen, Michael P.
Tayebjee, Murad J. Y.
Kats, Mikhail A.
Congreve, Daniel N.
Optics
Materials Science
Upconversion of low-energy photons to higher-energy photons provides an opportunity to surpass traditional limitations in fields such as 3D printing, photovoltaics, and photocatalysis. Triplet--triplet annihilation upconversion (TTA-UC) is particularly appealing for such applications as it can efficiently upconvert low-intensity, incoherent light. However, previously demonstrated thin-film TTA systems are simultaneously constrained by modest efficiencies and limited reach into the near infrared (NIR). Here, we design a single-layer thin-film bulk heterojunction that integrates PbS quantum dots (QDs) as tunable NIR absorbers within an organic semiconductor matrix of TES-ADT, achieving large anti-Stokes shifts up to 500 nm and high internal quantum efficiencies across the NIR-I and NIR-II windows (800-1200 nm). Through the incorporation of 5-tetracene carboxylic acid ligands on the PbS QD surface, the yield of sensitized triplets was boosted, as confirmed by transient absorption and time-resolved photoluminescence measurements. The resulting films demonstrated a 15-fold improvement in UC efficiency. Furthermore, we demonstrate visible imaging of incoherent 1200 nm light via thin-film TTA-UC at incident intensities at the imaging mask as low as 20 mWcm$^2$, marking a significant advance toward practical implementation of solid-state NIR-to-visible upconversion.
title Visible Imaging of Incoherent 1200-nm Light via Triplet--Triplet Annihilation Upconversion
topic Optics
Materials Science
url https://arxiv.org/abs/2510.15184