Altermagnetism induced surface Chern insulator
Fuente:
arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866917021298458624 |
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| author | Jiang, Xuance Ghorashi, Sayed Ali Akbar Lu, Deyu Cano, Jennifer |
| author_facet | Jiang, Xuance Ghorashi, Sayed Ali Akbar Lu, Deyu Cano, Jennifer |
| contents | We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a robust and switchable platform with near- vanishing magnetization. We demonstrate the feasibility of this approach by studying a slab of the TCI SnTe coupled to an altermagnetic RuO2 layer. Our first-principles calculations reveal that the d-wave altermagnetism in RuO2 induces a 7 meV gap to the Dirac surface states on the (110) surface of SnTe, producing a finite anomalous Hall effect. Our approach generalizes to broader classes of altermagnetic materials and TCIs, thereby providing a family of topological altermagnetic heterostructures with small or vanishing magnetization that support nontrivial Chern numbers. Our results highlight a promising new topological platform with great tunability and applications to spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_15357 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Altermagnetism induced surface Chern insulator Jiang, Xuance Ghorashi, Sayed Ali Akbar Lu, Deyu Cano, Jennifer Mesoscale and Nanoscale Physics Materials Science We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a robust and switchable platform with near- vanishing magnetization. We demonstrate the feasibility of this approach by studying a slab of the TCI SnTe coupled to an altermagnetic RuO2 layer. Our first-principles calculations reveal that the d-wave altermagnetism in RuO2 induces a 7 meV gap to the Dirac surface states on the (110) surface of SnTe, producing a finite anomalous Hall effect. Our approach generalizes to broader classes of altermagnetic materials and TCIs, thereby providing a family of topological altermagnetic heterostructures with small or vanishing magnetization that support nontrivial Chern numbers. Our results highlight a promising new topological platform with great tunability and applications to spintronics. |
| title | Altermagnetism induced surface Chern insulator |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2510.15357 |