Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature

Fuente: arXiv

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Bibliographic Details
Main Authors:	Wang, Chen, Jiang, Kai, Zhao, Jinxiu, Wang, Ziheng, Wang, Guilei, Zhao, Chao, Si, Mengwei
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2510.15358