Gate-tunable Josephson diodes in magic-angle twisted bilayer graphene

Fuente: arXiv
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Main Authors: Rothstein, A., Dolleman, R. J., Klebl, L., Achtermann, A., Volmer, F., Watanabe, K., Taniguchi, T., Hassler, F., Banszerus, L., Beschoten, B., Stampfer, C.
Format: Preprint
Published: 2025
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author Rothstein, A.
Dolleman, R. J.
Klebl, L.
Achtermann, A.
Volmer, F.
Watanabe, K.
Taniguchi, T.
Hassler, F.
Banszerus, L.
Beschoten, B.
Stampfer, C.
author_facet Rothstein, A.
Dolleman, R. J.
Klebl, L.
Achtermann, A.
Volmer, F.
Watanabe, K.
Taniguchi, T.
Hassler, F.
Banszerus, L.
Beschoten, B.
Stampfer, C.
contents We report low-temperature measurements of two adjacent, gate-defined Josephson junctions (JJs) in magic-angle twisted bilayer graphene (MATBG) at a moiré filling factor near $ν= -2$. We show that both junctions exhibit a prominent, gate-tunable Josephson diode effect, which we explain by a combination of large kinetic inductance and non-uniform supercurrent distribution. Despite their proximity, the JJs display differences in their interference patterns and different diode behavior, underscoring that microscopic inhomogeneities such as twist angle variations shape the non-uniform supercurrent and drive the diode behavior. As a result, the nonreciprocal supercurrent can be tuned by gate voltage, enabling tuning of the diode efficiency and even reversing the polarity at fixed magnetic fields. Our findings offer potential routes for tailoring Josephson diode performance in superconducting quantum circuits.
format Preprint
id arxiv_https___arxiv_org_abs_2510_15503
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Gate-tunable Josephson diodes in magic-angle twisted bilayer graphene
Rothstein, A.
Dolleman, R. J.
Klebl, L.
Achtermann, A.
Volmer, F.
Watanabe, K.
Taniguchi, T.
Hassler, F.
Banszerus, L.
Beschoten, B.
Stampfer, C.
Mesoscale and Nanoscale Physics
Materials Science
We report low-temperature measurements of two adjacent, gate-defined Josephson junctions (JJs) in magic-angle twisted bilayer graphene (MATBG) at a moiré filling factor near $ν= -2$. We show that both junctions exhibit a prominent, gate-tunable Josephson diode effect, which we explain by a combination of large kinetic inductance and non-uniform supercurrent distribution. Despite their proximity, the JJs display differences in their interference patterns and different diode behavior, underscoring that microscopic inhomogeneities such as twist angle variations shape the non-uniform supercurrent and drive the diode behavior. As a result, the nonreciprocal supercurrent can be tuned by gate voltage, enabling tuning of the diode efficiency and even reversing the polarity at fixed magnetic fields. Our findings offer potential routes for tailoring Josephson diode performance in superconducting quantum circuits.
title Gate-tunable Josephson diodes in magic-angle twisted bilayer graphene
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2510.15503