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Main Authors: Pan, Yaxin, Wang, Chongze, Liu, Shuyuan, Ren, Fengzhu, Liu, Chang, Wang, Bing, Cho, Jun-Hyung
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2510.16379
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author Pan, Yaxin
Wang, Chongze
Liu, Shuyuan
Ren, Fengzhu
Liu, Chang
Wang, Bing
Cho, Jun-Hyung
author_facet Pan, Yaxin
Wang, Chongze
Liu, Shuyuan
Ren, Fengzhu
Liu, Chang
Wang, Bing
Cho, Jun-Hyung
contents Two-dimensional(2D) multiferroic materials hold significant promise for advancing the miniaturization and integration of nanodevices. In this study, we demonstrate that 2D bilayer ScI2, which exhibits ferromagnetic(FM) ordering within each layer, enables the tuning of interlayer magnetic coupling, ferroelectricity, and valley polarization through interlayer sliding and rotation. Our first-principles calculations show that the AA stacking configuration induces antiferromagnetic (AFM) interlayer coupling, while a 180 rotation of one layer (resulting in the antialigned AA stacking) leads to FM interlayer coupling. Moreover, the interlayer magnetic coupling can be switched between AFM and FM by translating the stacking configuration: FM in the aligned AB and BA configurations, and AFM in the antialigned AB and BA configurations. This switching behavior is driven by variations in superexchange interactions due to orbital hopping between layers. Notably, the aligned stacking exhibits ferroelectricity upon sliding, which is induced by interlayer orbital hybridization and the resulting asymmetric charge redistribution, with maximal ferroelectric behavior occurring at the AB and BA stacking configurations. Additionally, for the AB and BA stackings, spontaneous valley polarization emerges from the manipulation of the spin orientation toward the out-of-plane direction. This valley polarization arises due to inversion symmetry breaking, either through ferroelectricity (in the AB and BA stackings) or AFM interlayer coupling , in combination with spin-orbit coupling. These results highlight the intricate interplay between magnetism, ferroelectricity, and valley polarization in bilayer ScI2, with each property being tunable via stacking configuration.
format Preprint
id arxiv_https___arxiv_org_abs_2510_16379
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Stacking-tunable multiferroic states in bilayer ScI2
Pan, Yaxin
Wang, Chongze
Liu, Shuyuan
Ren, Fengzhu
Liu, Chang
Wang, Bing
Cho, Jun-Hyung
Materials Science
Two-dimensional(2D) multiferroic materials hold significant promise for advancing the miniaturization and integration of nanodevices. In this study, we demonstrate that 2D bilayer ScI2, which exhibits ferromagnetic(FM) ordering within each layer, enables the tuning of interlayer magnetic coupling, ferroelectricity, and valley polarization through interlayer sliding and rotation. Our first-principles calculations show that the AA stacking configuration induces antiferromagnetic (AFM) interlayer coupling, while a 180 rotation of one layer (resulting in the antialigned AA stacking) leads to FM interlayer coupling. Moreover, the interlayer magnetic coupling can be switched between AFM and FM by translating the stacking configuration: FM in the aligned AB and BA configurations, and AFM in the antialigned AB and BA configurations. This switching behavior is driven by variations in superexchange interactions due to orbital hopping between layers. Notably, the aligned stacking exhibits ferroelectricity upon sliding, which is induced by interlayer orbital hybridization and the resulting asymmetric charge redistribution, with maximal ferroelectric behavior occurring at the AB and BA stacking configurations. Additionally, for the AB and BA stackings, spontaneous valley polarization emerges from the manipulation of the spin orientation toward the out-of-plane direction. This valley polarization arises due to inversion symmetry breaking, either through ferroelectricity (in the AB and BA stackings) or AFM interlayer coupling , in combination with spin-orbit coupling. These results highlight the intricate interplay between magnetism, ferroelectricity, and valley polarization in bilayer ScI2, with each property being tunable via stacking configuration.
title Stacking-tunable multiferroic states in bilayer ScI2
topic Materials Science
url https://arxiv.org/abs/2510.16379