Switchable axionic magnetoelectric effect via spin-flop transition in topological antiferromagnets

Fuente: arXiv
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Autores principales: Fan, Yiliang, Zhu, Rongxiang, Zhu, Tongshuai, Zhao, Jianzhou, Wang, Huaiqiang, Zhang, Haijun
Formato: Preprint
Publicado: 2025
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author Fan, Yiliang
Zhu, Rongxiang
Zhu, Tongshuai
Zhao, Jianzhou
Wang, Huaiqiang
Zhang, Haijun
author_facet Fan, Yiliang
Zhu, Rongxiang
Zhu, Tongshuai
Zhao, Jianzhou
Wang, Huaiqiang
Zhang, Haijun
contents The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to significantly influence the axion state, a profound understanding of their interplay remains elusive. In this work, we employ an antiferromagnetic spin-chain model to demonstrate that an external magnetic field induces extrinsic perpendicular magnetic anisotropy. We find that an in-plane field stabilizes the antiferromagnetic order, whereas an out-of-plane field destabilizes it and triggers spin-flop transitions. Remarkably, near the surface spin-flop transition in even-layer MnBi$_2$Te$_4$ films, the axion insulator state undergoes a sharp switching behavior accompanied by distinct magnetoelectric responses. Furthermore, we propose that this switchable axionic magnetoelectric effect can be utilized to convert alternating magnetic field signals into measurable square-wave magneto-optical outputs, thereby realizing an axionic analog of a zero-crossing detector. Our findings could open a pathway toward potential applications of axion insulators in next-generation spintronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2510_16760
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Switchable axionic magnetoelectric effect via spin-flop transition in topological antiferromagnets
Fan, Yiliang
Zhu, Rongxiang
Zhu, Tongshuai
Zhao, Jianzhou
Wang, Huaiqiang
Zhang, Haijun
Mesoscale and Nanoscale Physics
The MnBi$_2$Te$_4$ material family has emerged as a key platform for exploring magnetic topological phases, most notably exemplified by the experimental realization of the axion insulator state. While spin dynamics are known to significantly influence the axion state, a profound understanding of their interplay remains elusive. In this work, we employ an antiferromagnetic spin-chain model to demonstrate that an external magnetic field induces extrinsic perpendicular magnetic anisotropy. We find that an in-plane field stabilizes the antiferromagnetic order, whereas an out-of-plane field destabilizes it and triggers spin-flop transitions. Remarkably, near the surface spin-flop transition in even-layer MnBi$_2$Te$_4$ films, the axion insulator state undergoes a sharp switching behavior accompanied by distinct magnetoelectric responses. Furthermore, we propose that this switchable axionic magnetoelectric effect can be utilized to convert alternating magnetic field signals into measurable square-wave magneto-optical outputs, thereby realizing an axionic analog of a zero-crossing detector. Our findings could open a pathway toward potential applications of axion insulators in next-generation spintronic devices.
title Switchable axionic magnetoelectric effect via spin-flop transition in topological antiferromagnets
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2510.16760