A first-principles investigation of the diffusivities of oxygen and oxygen defects in ThO$_2$
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866912659516948480 |
|---|---|
| author | Singh, Maniesha El-Azab, Anter |
| author_facet | Singh, Maniesha El-Azab, Anter |
| contents | A comprehensive analysis is presented for the diffusivity of oxygen defects and oxygen self-diffusion in ThO$-2$. The migration energy and diffusivity of oxygen defects with nominal charges have been investigated using density functional theory and phonon simulations. The pathway for the lowest migration energy barrier of oxygen vacancies was found to be along the $\langle 100 \rangle$ direction. Neutral and non-neutral oxygen interstitials exhibited direct (interstitial) and indirect (interstitialcy) migration, respectively. The vacancy migration barrier was found to be lowest for the highest charge, while for interstitials, it is lowest when the charge is lowest. The attempt frequencies of defects were calculated using the Eyring and Vineyard theories. These frequencies displayed a similar dependence on the defect charge as the activation barriers. The charge-averaged diffusivity of vacancies and interstitials were also computed. Across all temperatures, the average vacancy diffusivity was found to be greater than that of interstitial, indicating that oxygen vacancies are more mobile than interstitials. Oxygen self- and chemical diffusion coefficients were analyzed by combining the defect diffusivities with the concentrations computed using an equilibrium defect thermodynamics. The self-diffusion coefficient of oxygen was found to rise with temperatures and lower oxygen pressures. The contributions of various defects to self-diffusion of oxygen were subsequently examined. In the normal to high oxygen pressure range, at all temperatures, it is found that interstitials contribute most to oxygen diffusion in ThO2. At low oxygen pressures, vacancies with highest charge state were found to dominate oxygen diffusion. The chemical diffusion coefficient of oxygen was further computed, which was found to increase with temperature and decrease with hypo-stoichiometry in ThO2 to a plateau value. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_16982 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | A first-principles investigation of the diffusivities of oxygen and oxygen defects in ThO$_2$ Singh, Maniesha El-Azab, Anter Materials Science A comprehensive analysis is presented for the diffusivity of oxygen defects and oxygen self-diffusion in ThO$-2$. The migration energy and diffusivity of oxygen defects with nominal charges have been investigated using density functional theory and phonon simulations. The pathway for the lowest migration energy barrier of oxygen vacancies was found to be along the $\langle 100 \rangle$ direction. Neutral and non-neutral oxygen interstitials exhibited direct (interstitial) and indirect (interstitialcy) migration, respectively. The vacancy migration barrier was found to be lowest for the highest charge, while for interstitials, it is lowest when the charge is lowest. The attempt frequencies of defects were calculated using the Eyring and Vineyard theories. These frequencies displayed a similar dependence on the defect charge as the activation barriers. The charge-averaged diffusivity of vacancies and interstitials were also computed. Across all temperatures, the average vacancy diffusivity was found to be greater than that of interstitial, indicating that oxygen vacancies are more mobile than interstitials. Oxygen self- and chemical diffusion coefficients were analyzed by combining the defect diffusivities with the concentrations computed using an equilibrium defect thermodynamics. The self-diffusion coefficient of oxygen was found to rise with temperatures and lower oxygen pressures. The contributions of various defects to self-diffusion of oxygen were subsequently examined. In the normal to high oxygen pressure range, at all temperatures, it is found that interstitials contribute most to oxygen diffusion in ThO2. At low oxygen pressures, vacancies with highest charge state were found to dominate oxygen diffusion. The chemical diffusion coefficient of oxygen was further computed, which was found to increase with temperature and decrease with hypo-stoichiometry in ThO2 to a plateau value. |
| title | A first-principles investigation of the diffusivities of oxygen and oxygen defects in ThO$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.16982 |