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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.17672 |
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| _version_ | 1866914104406441984 |
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| author | Lazareno, Katelyn Chae, Christopher Haight, Becky Jabin, Shams Steinhardt, Rachel Plombon, John J. Rajan, Siddharth Woodward, Patrick M. Hwang, Jinwoo Yang, Fengyuan |
| author_facet | Lazareno, Katelyn Chae, Christopher Haight, Becky Jabin, Shams Steinhardt, Rachel Plombon, John J. Rajan, Siddharth Woodward, Patrick M. Hwang, Jinwoo Yang, Fengyuan |
| contents | To investigate the scope of ferroelectric behavior in La-substituted BiFeO3 films, LaxBi1-xFeO3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO3(001) and DyScO3(110) substrates with a SrRuO3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi1-xFeO3 films across a wide range of x = 0.05-0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x $\geq$ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi1-xFeO3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_17672 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Broad-Range Tuning of Ferroelectric Switching of LaxBi1-xFeO3 Epitaxial Films via Digital Doping using Off-Axis Co-Sputtering Lazareno, Katelyn Chae, Christopher Haight, Becky Jabin, Shams Steinhardt, Rachel Plombon, John J. Rajan, Siddharth Woodward, Patrick M. Hwang, Jinwoo Yang, Fengyuan Materials Science To investigate the scope of ferroelectric behavior in La-substituted BiFeO3 films, LaxBi1-xFeO3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO3(001) and DyScO3(110) substrates with a SrRuO3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi1-xFeO3 films across a wide range of x = 0.05-0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x $\geq$ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi1-xFeO3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures. |
| title | Broad-Range Tuning of Ferroelectric Switching of LaxBi1-xFeO3 Epitaxial Films via Digital Doping using Off-Axis Co-Sputtering |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.17672 |