Altıner, G., Bolding, J., Kaplan, Y. M., Souren, F., de Vries, H., Turan, R., & Nasser, H. (2025). Hydrogenated Aluminum Doped Zinc Oxide as Highly Transparent and Passivating Indium-Free Recombination Junction for TOPCon-Based Bottom Cell.
Style de citation Chicago (17e éd.)Altıner, Gökhan, Jons Bolding, Yiğit Mert Kaplan, Floor Souren, Hindrik de Vries, Raşit Turan, et Hisham Nasser. Hydrogenated Aluminum Doped Zinc Oxide as Highly Transparent and Passivating Indium-Free Recombination Junction for TOPCon-Based Bottom Cell. 2025.
Style de citation MLA (9e éd.)Altıner, Gökhan, et al. Hydrogenated Aluminum Doped Zinc Oxide as Highly Transparent and Passivating Indium-Free Recombination Junction for TOPCon-Based Bottom Cell. 2025.
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