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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.17831 |
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| _version_ | 1866909862170984448 |
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| author | Hardy II, John F. Garrard, Jack A. Giardini, Guilherme S. Y. daCunha, Carlo R. |
| author_facet | Hardy II, John F. Garrard, Jack A. Giardini, Guilherme S. Y. daCunha, Carlo R. |
| contents | This work demonstrates that porous helical WOx architectures enable a distinct low-power regime for planar ITO/WOx/ITO resistive random-access devices. While thin film and helical devices behave similarly at a 5 mA compliance, only helical devices sustain reproducible operation at 500 uA, where RESET voltages reduce by ~60%, switching currents decrease by 68-75%, and SET/RESET power drops by ~89% and ~83%. With helical devices operating at 500 uA, the memory window expands 400-600% due to selective suppression of high-resistive-state leakage, yielding both lower-power and improved read margin in a regime inaccessible to thin film devices. These results highlight geometry-driven field enhancement and confinement as practical design principles for low-power, high-margin resistive memories and point toward opportunities in transparent, flexible, and high-surface-area material systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_17831 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Impact of Switching Layer Architecture on Power Consumption in RRAM Hardy II, John F. Garrard, Jack A. Giardini, Guilherme S. Y. daCunha, Carlo R. Applied Physics Materials Science This work demonstrates that porous helical WOx architectures enable a distinct low-power regime for planar ITO/WOx/ITO resistive random-access devices. While thin film and helical devices behave similarly at a 5 mA compliance, only helical devices sustain reproducible operation at 500 uA, where RESET voltages reduce by ~60%, switching currents decrease by 68-75%, and SET/RESET power drops by ~89% and ~83%. With helical devices operating at 500 uA, the memory window expands 400-600% due to selective suppression of high-resistive-state leakage, yielding both lower-power and improved read margin in a regime inaccessible to thin film devices. These results highlight geometry-driven field enhancement and confinement as practical design principles for low-power, high-margin resistive memories and point toward opportunities in transparent, flexible, and high-surface-area material systems. |
| title | Impact of Switching Layer Architecture on Power Consumption in RRAM |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2510.17831 |