Li, J. (2025). The origins of the leakage currents of p-n junction and Schottky diodes in all kinds of materials: A novel explanation based on impurity-photovoltaic-effect due to the self-absorption of the room-temperature infrared emission from materials.
Cita Chicago Style (17a ed.)Li, Jianming. The Origins of the Leakage Currents of P-n Junction and Schottky Diodes in All Kinds of Materials: A Novel Explanation Based on Impurity-photovoltaic-effect Due to the Self-absorption of the Room-temperature Infrared Emission from Materials. 2025.
Cita MLA (9a ed.)Li, Jianming. The Origins of the Leakage Currents of P-n Junction and Schottky Diodes in All Kinds of Materials: A Novel Explanation Based on Impurity-photovoltaic-effect Due to the Self-absorption of the Room-temperature Infrared Emission from Materials. 2025.