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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2510.18778 |
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| _version_ | 1866912663118807040 |
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| author | Hofer, Maximilian Fuchs, Christopher Siebert, Moritz Berger, Christian Fürst, Lena Stehno, Martin Schreyeck, Steffen Buhmann, Hartmut Kießling, Tobias Beugeling, Wouter Molenkamp, Laurens W. |
| author_facet | Hofer, Maximilian Fuchs, Christopher Siebert, Moritz Berger, Christian Fürst, Lena Stehno, Martin Schreyeck, Steffen Buhmann, Hartmut Kießling, Tobias Beugeling, Wouter Molenkamp, Laurens W. |
| contents | Even small electrostatic potentials can dramatically influence the band structure of narrow-, broken-, and inverted-gap materials. A quantitative understanding often necessitates a self-consistent Hartree approach. The valence and conduction band states strongly hybridize and/or cross in these systems. This makes distinguishing between electrons and holes impossible and the assumption of a flat charge carrier distribution at the charge neutrality point hard to justify. Consequently the wide-gap approach often fails in these systems. An alternative is the full-band envelope-function approach by Andlauer and Vogl, which has been implemented into the open-source software package kdotpy (arXiv:2407.12651). We show that this approach and implementation gives numerically stable and quantitatively accurate results where the conventional method fails by modeling the experimental subband density evolution with top-gate voltage in thick (26 nm - 110 nm), topologically inverted HgTe quantum wells. We expect our openly-available implementation to greatly benefit the investigation of narrow-, broken-, and inverted-gap materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_18778 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Self-Consistent Model for Gate Control of Narrow-, Broken-, and Inverted-Gap (Topological) Heterostructures Hofer, Maximilian Fuchs, Christopher Siebert, Moritz Berger, Christian Fürst, Lena Stehno, Martin Schreyeck, Steffen Buhmann, Hartmut Kießling, Tobias Beugeling, Wouter Molenkamp, Laurens W. Mesoscale and Nanoscale Physics Computational Physics Even small electrostatic potentials can dramatically influence the band structure of narrow-, broken-, and inverted-gap materials. A quantitative understanding often necessitates a self-consistent Hartree approach. The valence and conduction band states strongly hybridize and/or cross in these systems. This makes distinguishing between electrons and holes impossible and the assumption of a flat charge carrier distribution at the charge neutrality point hard to justify. Consequently the wide-gap approach often fails in these systems. An alternative is the full-band envelope-function approach by Andlauer and Vogl, which has been implemented into the open-source software package kdotpy (arXiv:2407.12651). We show that this approach and implementation gives numerically stable and quantitatively accurate results where the conventional method fails by modeling the experimental subband density evolution with top-gate voltage in thick (26 nm - 110 nm), topologically inverted HgTe quantum wells. We expect our openly-available implementation to greatly benefit the investigation of narrow-, broken-, and inverted-gap materials. |
| title | Self-Consistent Model for Gate Control of Narrow-, Broken-, and Inverted-Gap (Topological) Heterostructures |
| topic | Mesoscale and Nanoscale Physics Computational Physics |
| url | https://arxiv.org/abs/2510.18778 |