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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2510.19697 |
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| _version_ | 1866917376528744448 |
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| author | Li, Changhao Zubialevich, Vitaly Z. Parbrook, Peter J. Corbett, Brian Li, Zhi |
| author_facet | Li, Changhao Zubialevich, Vitaly Z. Parbrook, Peter J. Corbett, Brian Li, Zhi |
| contents | The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-light-emitting diode applications. This work investigates the origins of morphological non-uniformity in micro-pyramids and micro-platelets grown by metal-organic chemical vapor deposition (MOCVD). We observe that a direct one-step growth approach leads to significant growth rate inhomogeneity across arrays. To shed light on this issue, we examine the mechanisms driving non-uniformity and explore process modifications aimed at mitigating these effects. Building on these insights, we propose a controlled multi-step growth strategy that combines sequen-tial growth and thermal treatment phases. This approach is demonstrated to enhance surface morphology and structural regularity. The work contributes to the broader objective of enabling scalable, high-precision GaN microstructure fabrication for next-generation optoelectronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_19697 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High Uniformity GaN Micro-pyramids and Platelets by Selective Area Growth Li, Changhao Zubialevich, Vitaly Z. Parbrook, Peter J. Corbett, Brian Li, Zhi Optics Materials Science The development of uniform GaN micro-pyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for micro-light-emitting diode applications. This work investigates the origins of morphological non-uniformity in micro-pyramids and micro-platelets grown by metal-organic chemical vapor deposition (MOCVD). We observe that a direct one-step growth approach leads to significant growth rate inhomogeneity across arrays. To shed light on this issue, we examine the mechanisms driving non-uniformity and explore process modifications aimed at mitigating these effects. Building on these insights, we propose a controlled multi-step growth strategy that combines sequen-tial growth and thermal treatment phases. This approach is demonstrated to enhance surface morphology and structural regularity. The work contributes to the broader objective of enabling scalable, high-precision GaN microstructure fabrication for next-generation optoelectronic applications. |
| title | High Uniformity GaN Micro-pyramids and Platelets by Selective Area Growth |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2510.19697 |