Canted antiferromagnetism and excitonic order in gated double-layer graphene

Fuente: arXiv
Enregistré dans:
Détails bibliographiques
Auteurs principaux: Apinyan, V., Kopeć, T. K.
Format: Preprint
Publié: 2025
Sujets:
Accès en ligne:
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
_version_ 1866911227643428864
author Apinyan, V.
Kopeć, T. K.
author_facet Apinyan, V.
Kopeć, T. K.
contents We study the effects of the electron-electron interactions on the excitonic properties and charge-density modulations in the AB stacked double-layer (DL) graphene, placed in the external gate-potential $V$. The coexistence of the canted antiferromagnetic order and excitonic pairing gap has been studied with the help of the generalized Hubbard model. We calculate the chemical potential $μ$, the average charge density difference between the layers $δ{\bar{n}}$, the antiferromagnetic gap-function $Δ_{\rm AFM}$ and the excitonic order parameters $Δ_σ$ in the zero temperature limit. We found that the excitonic pairing order parameter has a larger energy scale than the canted antiferromagnetic gap-function. The charge neutrality, in the DL graphene system, occurs only in the absence of the external gate-potential $V$. Moreover, we have shown that the values of the antiferromagnetic gap-function $Δ_{\rm AFM}$ and excitonic order parameter $Δ_σ$ are always increasing at the large values of inter-layer Coulomb interaction, while they are decreasing for large values of the applied gate-potential $V$.
format Preprint
id arxiv_https___arxiv_org_abs_2510_19881
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Canted antiferromagnetism and excitonic order in gated double-layer graphene
Apinyan, V.
Kopeć, T. K.
Strongly Correlated Electrons
We study the effects of the electron-electron interactions on the excitonic properties and charge-density modulations in the AB stacked double-layer (DL) graphene, placed in the external gate-potential $V$. The coexistence of the canted antiferromagnetic order and excitonic pairing gap has been studied with the help of the generalized Hubbard model. We calculate the chemical potential $μ$, the average charge density difference between the layers $δ{\bar{n}}$, the antiferromagnetic gap-function $Δ_{\rm AFM}$ and the excitonic order parameters $Δ_σ$ in the zero temperature limit. We found that the excitonic pairing order parameter has a larger energy scale than the canted antiferromagnetic gap-function. The charge neutrality, in the DL graphene system, occurs only in the absence of the external gate-potential $V$. Moreover, we have shown that the values of the antiferromagnetic gap-function $Δ_{\rm AFM}$ and excitonic order parameter $Δ_σ$ are always increasing at the large values of inter-layer Coulomb interaction, while they are decreasing for large values of the applied gate-potential $V$.
title Canted antiferromagnetism and excitonic order in gated double-layer graphene
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2510.19881