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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.20326 |
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| _version_ | 1866914109075750912 |
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| author | Kato, Yoshimine Nakamura, Tomoaki Komorita, Katsuya Teii, Kungen |
| author_facet | Kato, Yoshimine Nakamura, Tomoaki Komorita, Katsuya Teii, Kungen |
| contents | Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and integration processes require multibillion-dollar investments and are desired to be reduced or simplified. Therefore, low-cost and non-toxic base metal materials with simple fabrication methods are desired for the future semiconductor industry. Recently, copper-based sulfides have been studied for semiconductor devices such as thermoelectric, photovoltaic, or water-splitting applications. Here, a highly rectifying p-n diode of a cubic (disordered) phase Cu4Fe5S8 polycrystal with a zincblende-like structure fabricated by a simple/low-cost wet process is shown. It is found that the Cu4Fe5S8 diode shows the highest rectification ratio in the order of 106 with a large forward current density of 15 Acm-2 (@1.5 V forward bias) at room temperature among the other compounds of copper iron sulfide devices. This remarkable and stable diode characteristic obtained by the p-type layer anodically grown on the sintered n-type cubic-Cu4Fe5S8 can bring the industry closer to low-cost semiconductor manufacturing. These results open a platform of novel semiconductor materials such as cubic-Cu4Fe5S8 with further superior crystal growth and conductive characteristics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_20326 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Highly Rectifying Cubic Copper Iron Sulfides p-n Junction Diode Fabricated by Anodic Oxidation Kato, Yoshimine Nakamura, Tomoaki Komorita, Katsuya Teii, Kungen Materials Science Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and integration processes require multibillion-dollar investments and are desired to be reduced or simplified. Therefore, low-cost and non-toxic base metal materials with simple fabrication methods are desired for the future semiconductor industry. Recently, copper-based sulfides have been studied for semiconductor devices such as thermoelectric, photovoltaic, or water-splitting applications. Here, a highly rectifying p-n diode of a cubic (disordered) phase Cu4Fe5S8 polycrystal with a zincblende-like structure fabricated by a simple/low-cost wet process is shown. It is found that the Cu4Fe5S8 diode shows the highest rectification ratio in the order of 106 with a large forward current density of 15 Acm-2 (@1.5 V forward bias) at room temperature among the other compounds of copper iron sulfide devices. This remarkable and stable diode characteristic obtained by the p-type layer anodically grown on the sintered n-type cubic-Cu4Fe5S8 can bring the industry closer to low-cost semiconductor manufacturing. These results open a platform of novel semiconductor materials such as cubic-Cu4Fe5S8 with further superior crystal growth and conductive characteristics. |
| title | Highly Rectifying Cubic Copper Iron Sulfides p-n Junction Diode Fabricated by Anodic Oxidation |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.20326 |