Real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866911228453978112 |
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| author | Hoffmann, Marco Chen, Shaohai Krishnaswamy, Gunasheel Kauwtilyaa Tan, Hang Khume Yap, Sherry L. K. Lourembam, James Soumyanarayanan, Anjan Gambardella, Pietro |
| author_facet | Hoffmann, Marco Chen, Shaohai Krishnaswamy, Gunasheel Kauwtilyaa Tan, Hang Khume Yap, Sherry L. K. Lourembam, James Soumyanarayanan, Anjan Gambardella, Pietro |
| contents | Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we investigate the real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions via relaxation in a magnetic field. We show that device-dependent charging effects and magnetic granularity in the free layer limit the switching speed at applied voltages close to the critical switching threshold. Increasing the voltage or the applied magnetic field reduces the incubation delay and total switching time to below a few ns. Micromagnetic simulations incorporating the finite charging times of the tunnel junction and the granularity of the magnetic film reproduce the experimental results, providing critical insights into optimizing VCMA-driven magnetization control for memory and logic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_20701 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions Hoffmann, Marco Chen, Shaohai Krishnaswamy, Gunasheel Kauwtilyaa Tan, Hang Khume Yap, Sherry L. K. Lourembam, James Soumyanarayanan, Anjan Gambardella, Pietro Applied Physics Mesoscale and Nanoscale Physics Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we investigate the real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions via relaxation in a magnetic field. We show that device-dependent charging effects and magnetic granularity in the free layer limit the switching speed at applied voltages close to the critical switching threshold. Increasing the voltage or the applied magnetic field reduces the incubation delay and total switching time to below a few ns. Micromagnetic simulations incorporating the finite charging times of the tunnel junction and the granularity of the magnetic film reproduce the experimental results, providing critical insights into optimizing VCMA-driven magnetization control for memory and logic applications. |
| title | Real-time dynamics of VCMA-assisted switching of magnetic tunnel junctions |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2510.20701 |