Intermediate Resistive State in Wafer-Scale MoS${_2}$ Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications
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2025
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| author | Fa, Yuan Buttberg, Milan Ran, Ke Ahmad, Rana Walied Braun, Dennis Völkel, Lukas Lee, Jimin Cruces, Sofía Macco, Bart Canto, Bárbara Lerch, Holger Wahlbrink, Thorsten Kalisch, Holger Heuken, Michael Vescan, Andrei Mayer, Joachim Wang, Zhenxing Valov, Ilia Menzel, Stephan Lemme, Max C. |
| author_facet | Fa, Yuan Buttberg, Milan Ran, Ke Ahmad, Rana Walied Braun, Dennis Völkel, Lukas Lee, Jimin Cruces, Sofía Macco, Bart Canto, Bárbara Lerch, Holger Wahlbrink, Thorsten Kalisch, Holger Heuken, Michael Vescan, Andrei Mayer, Joachim Wang, Zhenxing Valov, Ilia Menzel, Stephan Lemme, Max C. |
| contents | Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS${_2}$) have been extensively studied. Their RS has been attributed to the formation and rupture of conductive filaments (CFs). However, the underlying mechanism of filament formation remains underexplored, and the inherently stochastic nature of RS leads to high variability and limited reproducibility. Additionally, the lack of scalable fabrication techniques for 2DM-based memristors restricts their integration into standard semiconductor technology. Here, we demonstrate memristors based on metal-organic chemical vapor-deposited MoS${_2}$ on the wafer-scale. Our devices exhibit volatile and nonvolatile RS behavior, tunable by modulating the current compliance. Notably, we observe stable RS characteristics in an intermediate resistive state (IRS), featuring set and reset voltages within $\pm$1 V, an endurance exceeding 2500 cycles in direct current mode, and a state retention over 10${^6}$ s. The experimental data, complemented with simulations, suggest that the IRS originates from the lateral growth of the CF within the MoS${_2}$ layer. Furthermore, the devices successfully emulate synaptic plasticity with current responses on the microsecond timescale, highlighting their potential for large-scale integration in neuromorphic computing architectures. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2510_20829 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Intermediate Resistive State in Wafer-Scale MoS${_2}$ Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications Fa, Yuan Buttberg, Milan Ran, Ke Ahmad, Rana Walied Braun, Dennis Völkel, Lukas Lee, Jimin Cruces, Sofía Macco, Bart Canto, Bárbara Lerch, Holger Wahlbrink, Thorsten Kalisch, Holger Heuken, Michael Vescan, Andrei Mayer, Joachim Wang, Zhenxing Valov, Ilia Menzel, Stephan Lemme, Max C. Applied Physics Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS${_2}$) have been extensively studied. Their RS has been attributed to the formation and rupture of conductive filaments (CFs). However, the underlying mechanism of filament formation remains underexplored, and the inherently stochastic nature of RS leads to high variability and limited reproducibility. Additionally, the lack of scalable fabrication techniques for 2DM-based memristors restricts their integration into standard semiconductor technology. Here, we demonstrate memristors based on metal-organic chemical vapor-deposited MoS${_2}$ on the wafer-scale. Our devices exhibit volatile and nonvolatile RS behavior, tunable by modulating the current compliance. Notably, we observe stable RS characteristics in an intermediate resistive state (IRS), featuring set and reset voltages within $\pm$1 V, an endurance exceeding 2500 cycles in direct current mode, and a state retention over 10${^6}$ s. The experimental data, complemented with simulations, suggest that the IRS originates from the lateral growth of the CF within the MoS${_2}$ layer. Furthermore, the devices successfully emulate synaptic plasticity with current responses on the microsecond timescale, highlighting their potential for large-scale integration in neuromorphic computing architectures. |
| title | Intermediate Resistive State in Wafer-Scale MoS${_2}$ Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2510.20829 |