Combining metal dewetting and lateral etching for the scalable top-down fabrication of GaN nanowire arrays with independently tunable diameter and spacing

Documenti analoghi

• Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
  di: Kang, Jingxuan, et al.
  Pubblicazione: (2024)
• Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles
  di: Fernández-Garrido, Sergio, et al.
  Pubblicazione: (2024)
• Diameter dependence of light absorption in GaAs nanowires evidenced by photoluminescence spectroscopy
  di: Marín, Francisca, et al.
  Pubblicazione: (2025)
• Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
  di: Fernández-Garrido, Sergio, et al.
  Pubblicazione: (2024)
• Polarity-induced selective area epitaxy of GaN nanowires
  di: Schiaber, Ziani de Souza, et al.
  Pubblicazione: (2024)