Unravelling the oxygen influence in cubic bixbyite In$_2$O$_3$ on Raman active phonon modes by isotope studies

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Auteurs principaux: Feldl, Johannes, Gillen, Roland, Maultzsch, Janina, Papadogianni, Alexandra, Kler, Joe, Galazka, Zbigniew, Bierwagen, Oliver, Ramsteiner, Manfred
Format: Preprint
Publié: 2025
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author Feldl, Johannes
Gillen, Roland
Maultzsch, Janina
Papadogianni, Alexandra
Kler, Joe
Galazka, Zbigniew
Bierwagen, Oliver
Ramsteiner, Manfred
author_facet Feldl, Johannes
Gillen, Roland
Maultzsch, Janina
Papadogianni, Alexandra
Kler, Joe
Galazka, Zbigniew
Bierwagen, Oliver
Ramsteiner, Manfred
contents In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite In$_2$O$_3$, an important oxide based, wide-bandgap semiconductor. Fundamental insights into the lattice dynamics are revealed, by determining the atomistic contribution to all modes and their frequencies by density functional perturbation theory calculations. Those simulations were performed for different compositions of $^{16}$O and $^{18}$O isotope ratios, including their pure states. An increasing red-shift of the mode frequencies with increasing $^{18}$O content for all modes, due to the increased atomic mass, is revealed. For the seven lowest energy modes, this relative shift is below 1%, whereas for the remaining 15 higher energetic modes a shift of about 5.5% was identified. All modes have energy contributions of both indium and oxygen lattice sites, except for one, which corresponds to a pure oxygen vibrational state. Applying Raman spectroscopy, those results could be verified experimentally with excellent agreement. Investigated samples consisted of a bulk single crystal with $^{16}$O isotopes and a MBE grown thin film as the $^{18}$O sample. Time-of-flight secondary ion mass spectrometry confirms the purity of the oxygen isotope in the sample. These isotopologue studies allow for a direct experimental access to fundamental material properties in cubic In$_2$O$_3$ by means of Raman spectroscopy. For example, we speculate, that the presence of oxygen vacancies in In$_2$O$_3$ would result in a shift of modes that are dominated by O-vibrations, e. g., $E_{g}^{(4)}$ or $A_{g}^{(4)}$, towards lower frequencies.
format Preprint
id arxiv_https___arxiv_org_abs_2510_22018
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Unravelling the oxygen influence in cubic bixbyite In$_2$O$_3$ on Raman active phonon modes by isotope studies
Feldl, Johannes
Gillen, Roland
Maultzsch, Janina
Papadogianni, Alexandra
Kler, Joe
Galazka, Zbigniew
Bierwagen, Oliver
Ramsteiner, Manfred
Materials Science
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite In$_2$O$_3$, an important oxide based, wide-bandgap semiconductor. Fundamental insights into the lattice dynamics are revealed, by determining the atomistic contribution to all modes and their frequencies by density functional perturbation theory calculations. Those simulations were performed for different compositions of $^{16}$O and $^{18}$O isotope ratios, including their pure states. An increasing red-shift of the mode frequencies with increasing $^{18}$O content for all modes, due to the increased atomic mass, is revealed. For the seven lowest energy modes, this relative shift is below 1%, whereas for the remaining 15 higher energetic modes a shift of about 5.5% was identified. All modes have energy contributions of both indium and oxygen lattice sites, except for one, which corresponds to a pure oxygen vibrational state. Applying Raman spectroscopy, those results could be verified experimentally with excellent agreement. Investigated samples consisted of a bulk single crystal with $^{16}$O isotopes and a MBE grown thin film as the $^{18}$O sample. Time-of-flight secondary ion mass spectrometry confirms the purity of the oxygen isotope in the sample. These isotopologue studies allow for a direct experimental access to fundamental material properties in cubic In$_2$O$_3$ by means of Raman spectroscopy. For example, we speculate, that the presence of oxygen vacancies in In$_2$O$_3$ would result in a shift of modes that are dominated by O-vibrations, e. g., $E_{g}^{(4)}$ or $A_{g}^{(4)}$, towards lower frequencies.
title Unravelling the oxygen influence in cubic bixbyite In$_2$O$_3$ on Raman active phonon modes by isotope studies
topic Materials Science
url https://arxiv.org/abs/2510.22018