Virtual Gates Enabled by Digital Surrogate of Quantum Dot Devices

Fuente: arXiv
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Auteurs principaux: Lidiak, Alexander, Swain, Jacob, Craig, David L., Hickie, Joseph, Yang, Yikai, Fedele, Federico, Saez-Mollejo, Jaime, Ballabio, Andrea, Chrastina, Daniel, Isella, Giovanni, Katsaros, Georgios, Lennon, Dominic T., Michal, Vincent P., Gauger, Erik M., Ares, Natalia
Format: Preprint
Publié: 2025
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author Lidiak, Alexander
Swain, Jacob
Craig, David L.
Hickie, Joseph
Yang, Yikai
Fedele, Federico
Saez-Mollejo, Jaime
Ballabio, Andrea
Chrastina, Daniel
Isella, Giovanni
Katsaros, Georgios
Lennon, Dominic T.
Michal, Vincent P.
Gauger, Erik M.
Ares, Natalia
author_facet Lidiak, Alexander
Swain, Jacob
Craig, David L.
Hickie, Joseph
Yang, Yikai
Fedele, Federico
Saez-Mollejo, Jaime
Ballabio, Andrea
Chrastina, Daniel
Isella, Giovanni
Katsaros, Georgios
Lennon, Dominic T.
Michal, Vincent P.
Gauger, Erik M.
Ares, Natalia
contents Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically defined quantum dots provide a promising platform but are not exempt from these limitations. Simulations enhance our understanding of such devices, and in many cases, rapid feedback between measurements and simulations can guide the development of optimal design and control strategies. Here, we introduce a modular, graph-based simulator that acts as a digital surrogate for a semiconductor quantum dot device, where computationally expensive processes are accelerated using deep learning. We demonstrate its potential by estimating crosstalk effects between gate electrodes and applying these estimates to construct virtual gates in a quantum dot device. We validate our approach through comparison with experiments on a double quantum dot defined in a Ge/SiGe heterostructure. We envision that this simulation framework will advance semiconductor-based quantum technologies by enabling more efficient design, characterization, and control of complex devices.
format Preprint
id arxiv_https___arxiv_org_abs_2510_24656
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Virtual Gates Enabled by Digital Surrogate of Quantum Dot Devices
Lidiak, Alexander
Swain, Jacob
Craig, David L.
Hickie, Joseph
Yang, Yikai
Fedele, Federico
Saez-Mollejo, Jaime
Ballabio, Andrea
Chrastina, Daniel
Isella, Giovanni
Katsaros, Georgios
Lennon, Dominic T.
Michal, Vincent P.
Gauger, Erik M.
Ares, Natalia
Mesoscale and Nanoscale Physics
Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically defined quantum dots provide a promising platform but are not exempt from these limitations. Simulations enhance our understanding of such devices, and in many cases, rapid feedback between measurements and simulations can guide the development of optimal design and control strategies. Here, we introduce a modular, graph-based simulator that acts as a digital surrogate for a semiconductor quantum dot device, where computationally expensive processes are accelerated using deep learning. We demonstrate its potential by estimating crosstalk effects between gate electrodes and applying these estimates to construct virtual gates in a quantum dot device. We validate our approach through comparison with experiments on a double quantum dot defined in a Ge/SiGe heterostructure. We envision that this simulation framework will advance semiconductor-based quantum technologies by enabling more efficient design, characterization, and control of complex devices.
title Virtual Gates Enabled by Digital Surrogate of Quantum Dot Devices
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2510.24656