Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866915585032454144 |
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| author | Huang, H-W S. Agrawal, S. Bhattacharya, D. Xing, H. G. Jena, D. |
| author_facet | Huang, H-W S. Agrawal, S. Bhattacharya, D. Xing, H. G. Jena, D. |
| contents | Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. In this study, the co-optimization of p-InGaN and n- AlGaN contacts for DUV LEDs are investigated. We find that using a thin 7%InGaN cap is effective in achieving ohmic p-contacts with specific contact resistivity of 3.10x10^{-5} Ohm.cm^2. Upon monolithic integration of p- and n- contacts for DUV LEDs, we find that the high temperature annealing of 800C required for the formation of low resistance contacts to n-AlGaN severely degrades the p-InGaN layer, thereby reducing the hole concentration and increasing the specific contact resistivity to 9.72x10^{-4} Ohm.cm^2. Depositing a SiO2 cap by plasma-enhanced atomic layer deposition (PE-ALD) prior to high temperature n-contact annealing restores the low p-contact resistivity, enabling simultaneous low-resistance p- and n-contacts. DUV-LEDs emitting at 268 nm fabricated with the SiO2 capping technique exhibit a 3.5 V reduction in operating voltage at a current level of 400 A/cm^2 and a decrease in differential ON-resistance from 6.4 mOhm.cm^2 to 4.5 mOhm.cm^2. This study highlights a scalable route to high-performance, high-Al-content bipolar AlGaN devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_24892 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates Huang, H-W S. Agrawal, S. Bhattacharya, D. Xing, H. G. Jena, D. Materials Science Applied Physics Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. In this study, the co-optimization of p-InGaN and n- AlGaN contacts for DUV LEDs are investigated. We find that using a thin 7%InGaN cap is effective in achieving ohmic p-contacts with specific contact resistivity of 3.10x10^{-5} Ohm.cm^2. Upon monolithic integration of p- and n- contacts for DUV LEDs, we find that the high temperature annealing of 800C required for the formation of low resistance contacts to n-AlGaN severely degrades the p-InGaN layer, thereby reducing the hole concentration and increasing the specific contact resistivity to 9.72x10^{-4} Ohm.cm^2. Depositing a SiO2 cap by plasma-enhanced atomic layer deposition (PE-ALD) prior to high temperature n-contact annealing restores the low p-contact resistivity, enabling simultaneous low-resistance p- and n-contacts. DUV-LEDs emitting at 268 nm fabricated with the SiO2 capping technique exhibit a 3.5 V reduction in operating voltage at a current level of 400 A/cm^2 and a decrease in differential ON-resistance from 6.4 mOhm.cm^2 to 4.5 mOhm.cm^2. This study highlights a scalable route to high-performance, high-Al-content bipolar AlGaN devices. |
| title | Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2510.24892 |