Cryogenic Characterization of Ferroelectric Non-volatile Capacitors

Fuente: arXiv
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Autores principales: Vadlamani, Madhav, Chakraborty, Dyutimoy, Jia, Jianwei, Mulaosmanovic, Halid, Duenkel, Stefan, Beyer, Sven, Datta, Suman, Yu, Shimeng
Formato: Preprint
Publicado: 2025
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author Vadlamani, Madhav
Chakraborty, Dyutimoy
Jia, Jianwei
Mulaosmanovic, Halid
Duenkel, Stefan
Beyer, Sven
Datta, Suman
Yu, Shimeng
author_facet Vadlamani, Madhav
Chakraborty, Dyutimoy
Jia, Jianwei
Mulaosmanovic, Halid
Duenkel, Stefan
Beyer, Sven
Datta, Suman
Yu, Shimeng
contents Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are susceptible to thermal noise limiting the effective number of bits (ENOB) for the weighted sum. A direct way to reduce this thermal noise is by lowering the temperature as thermal noise is proportional to temperature. In this work, we first characterize the non-volatile capacitors (nvCaps) on a foundry 28 nm platform at cryogenic temperatures to evaluate the memory window, ON state retention as a function of temperature down to 77K, and then use the calibrated device models to simulate the capacitive crossbar arrays in SPICE at lower temperatures to demonstrate higher ENOB (~5 bits) for 128x128 multiple-and-accumulate (MAC) operations.
format Preprint
id arxiv_https___arxiv_org_abs_2510_25040
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Cryogenic Characterization of Ferroelectric Non-volatile Capacitors
Vadlamani, Madhav
Chakraborty, Dyutimoy
Jia, Jianwei
Mulaosmanovic, Halid
Duenkel, Stefan
Beyer, Sven
Datta, Suman
Yu, Shimeng
Emerging Technologies
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are susceptible to thermal noise limiting the effective number of bits (ENOB) for the weighted sum. A direct way to reduce this thermal noise is by lowering the temperature as thermal noise is proportional to temperature. In this work, we first characterize the non-volatile capacitors (nvCaps) on a foundry 28 nm platform at cryogenic temperatures to evaluate the memory window, ON state retention as a function of temperature down to 77K, and then use the calibrated device models to simulate the capacitive crossbar arrays in SPICE at lower temperatures to demonstrate higher ENOB (~5 bits) for 128x128 multiple-and-accumulate (MAC) operations.
title Cryogenic Characterization of Ferroelectric Non-volatile Capacitors
topic Emerging Technologies
url https://arxiv.org/abs/2510.25040