Single-Shot All-Optical Switching in CoFeB/MgO Magnetic Tunnel Junctions
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909875598000128 |
|---|---|
| author | Igarashi, Junta Geiskopf, Sébastien Shinoda, Takanobu Jinnai, Butsurin Guen, Yann Le Hohlfeld, Julius Fukami, Shunsuke Ohno, Hideo Gorchon, Jon Mangin, Stéphane Hehn, Michel Malinowski, Grégory |
| author_facet | Igarashi, Junta Geiskopf, Sébastien Shinoda, Takanobu Jinnai, Butsurin Guen, Yann Le Hohlfeld, Julius Fukami, Shunsuke Ohno, Hideo Gorchon, Jon Mangin, Stéphane Hehn, Michel Malinowski, Grégory |
| contents | We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping layer thickness, we show that precise heat control enables deterministic magnetization reversal from parallel (P) to antiparallel (AP) state. Furthermore, we detect magnetization reversal in a micro scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport or dipolar interactions or a combination of both may play essential roles in the switching process. This work represents a significant step toward integrating AOS with MTJ technology. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_25102 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Single-Shot All-Optical Switching in CoFeB/MgO Magnetic Tunnel Junctions Igarashi, Junta Geiskopf, Sébastien Shinoda, Takanobu Jinnai, Butsurin Guen, Yann Le Hohlfeld, Julius Fukami, Shunsuke Ohno, Hideo Gorchon, Jon Mangin, Stéphane Hehn, Michel Malinowski, Grégory Mesoscale and Nanoscale Physics Materials Science Optics We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping layer thickness, we show that precise heat control enables deterministic magnetization reversal from parallel (P) to antiparallel (AP) state. Furthermore, we detect magnetization reversal in a micro scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport or dipolar interactions or a combination of both may play essential roles in the switching process. This work represents a significant step toward integrating AOS with MTJ technology. |
| title | Single-Shot All-Optical Switching in CoFeB/MgO Magnetic Tunnel Junctions |
| topic | Mesoscale and Nanoscale Physics Materials Science Optics |
| url | https://arxiv.org/abs/2510.25102 |