Citazione Stile APA (7a Edizione)

Hollar, E. J., & Farzana, E. (2025). Over 3 kV and Ultra-Low leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate.

Citazione stile Chigago Style (17a edizione)

Hollar, Emerson J., e Esmat Farzana. Over 3 KV and Ultra-Low Leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate. 2025.

Citatione MLA (9a ed.)

Hollar, Emerson J., e Esmat Farzana. Over 3 KV and Ultra-Low Leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate. 2025.