Hollar, E. J., & Farzana, E. (2025). Over 3 kV and Ultra-Low leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate.
Style de citation Chicago (17e éd.)Hollar, Emerson J., et Esmat Farzana. Over 3 KV and Ultra-Low Leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate. 2025.
Style de citation MLA (9e éd.)Hollar, Emerson J., et Esmat Farzana. Over 3 KV and Ultra-Low Leakage Vertical (011) \b{eta}-Ga2O3 Power Diodes with Engineered Schottky Contact and High-permittivity Dielectric Field Plate. 2025.
Attention : ces citations peuvent ne pas être correctes à 100%.