Characterization of the H2M Monolithic CMOS Sensor
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Ballabriga, Rafael Buschmann, Eric Campbell, Michael Mohr, Raimon Casanova Dannheim, Dominik Dilg, Jona Dorda, Ana Feyens, Ono King, Finn Gadow, Philipp Gregor, Ingrid-Maria Hansen, Karsten He, Yajun Huth, Lennart Kremastiotis, Iraklis Lachnit, Stephan Lemoine, Corentin Maffessanti, Stefano Mendes, Larissa Otarid, Younes Reckleben, Christian Rettie, Sébastien Viera, Manuel Alejandro del Rio Daza, Sara Ruiz Schlaadt, Judith Simancas, Adriana Snoeys, Walter Spannagel, Simon Vanat, Tomas Velyka, Anastasiia Vignola, Gianpiero Wennlöf, Håkan |
| author_facet | Ballabriga, Rafael Buschmann, Eric Campbell, Michael Mohr, Raimon Casanova Dannheim, Dominik Dilg, Jona Dorda, Ana Feyens, Ono King, Finn Gadow, Philipp Gregor, Ingrid-Maria Hansen, Karsten He, Yajun Huth, Lennart Kremastiotis, Iraklis Lachnit, Stephan Lemoine, Corentin Maffessanti, Stefano Mendes, Larissa Otarid, Younes Reckleben, Christian Rettie, Sébastien Viera, Manuel Alejandro del Rio Daza, Sara Ruiz Schlaadt, Judith Simancas, Adriana Snoeys, Walter Spannagel, Simon Vanat, Tomas Velyka, Anastasiia Vignola, Gianpiero Wennlöf, Håkan |
| contents | The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel detector architecture into a monolithic chip, using a digital-on-top design methodology, and developing a compact digital cell library. Each square pixel integrates an analog front-end and digital pulse processing with an 8-bit counter within a \SI{35}{\micro\meter}~pitch.
This contribution presents the performance of H2M based on laboratory and test beam measurements, including a comparison with analog front-end simulations in terms of gain and noise. A particular emphasis is placed on backside thinning in order to reduce material budget, down to a total chip thickness of \SI{21}{\micro\meter} for which no degradation in MIP detection performance is observed. For all investigated samples, a MIP detection efficiency above \SI{99}{\%} is achieved below a threshold of approximately 205 electrons. At this threshold, the fake-hit rate corresponds to a matrix occupancy of fewer than one pixel per the \SI{500}{\nano\second}~frame.
Measurements reveal a non-uniform in-pixel response, attributed to the formation of local potential wells in regions with low electric field. A simulation flow combining technology computer-aided design, Monte Carlo, and circuit simulations is used to investigate and describe this behavior, and is applied to develop mitigation strategies for future chip submissions with similar features. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_26741 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Characterization of the H2M Monolithic CMOS Sensor Ballabriga, Rafael Buschmann, Eric Campbell, Michael Mohr, Raimon Casanova Dannheim, Dominik Dilg, Jona Dorda, Ana Feyens, Ono King, Finn Gadow, Philipp Gregor, Ingrid-Maria Hansen, Karsten He, Yajun Huth, Lennart Kremastiotis, Iraklis Lachnit, Stephan Lemoine, Corentin Maffessanti, Stefano Mendes, Larissa Otarid, Younes Reckleben, Christian Rettie, Sébastien Viera, Manuel Alejandro del Rio Daza, Sara Ruiz Schlaadt, Judith Simancas, Adriana Snoeys, Walter Spannagel, Simon Vanat, Tomas Velyka, Anastasiia Vignola, Gianpiero Wennlöf, Håkan Instrumentation and Detectors The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel detector architecture into a monolithic chip, using a digital-on-top design methodology, and developing a compact digital cell library. Each square pixel integrates an analog front-end and digital pulse processing with an 8-bit counter within a \SI{35}{\micro\meter}~pitch. This contribution presents the performance of H2M based on laboratory and test beam measurements, including a comparison with analog front-end simulations in terms of gain and noise. A particular emphasis is placed on backside thinning in order to reduce material budget, down to a total chip thickness of \SI{21}{\micro\meter} for which no degradation in MIP detection performance is observed. For all investigated samples, a MIP detection efficiency above \SI{99}{\%} is achieved below a threshold of approximately 205 electrons. At this threshold, the fake-hit rate corresponds to a matrix occupancy of fewer than one pixel per the \SI{500}{\nano\second}~frame. Measurements reveal a non-uniform in-pixel response, attributed to the formation of local potential wells in regions with low electric field. A simulation flow combining technology computer-aided design, Monte Carlo, and circuit simulations is used to investigate and describe this behavior, and is applied to develop mitigation strategies for future chip submissions with similar features. |
| title | Characterization of the H2M Monolithic CMOS Sensor |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2510.26741 |