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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2510.27228 |
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| _version_ | 1866915588450811904 |
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| author | Rahaman, Imteaz Liao, Michael E. Wang, Ziqi Kwon, Eugene Y. Sun, Rui Li, Botong Ellis, Hunter D. Duersch, Bobby G. Sun, Dali Liu, Jun Goorsky, Mark S. Scarpulla, Michael A. Fu, Kai |
| author_facet | Rahaman, Imteaz Liao, Michael E. Wang, Ziqi Kwon, Eugene Y. Sun, Rui Li, Botong Ellis, Hunter D. Duersch, Bobby G. Sun, Dali Liu, Jun Goorsky, Mark S. Scarpulla, Michael A. Fu, Kai |
| contents | Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, and high theoretical thermal conductivity. However, experimental data on the thermal conductivity of r-GeO2 epitaxial layers have not been reported, primarily due to challenges in phase control and surface roughness. Here, we report a high thermal conductivity of 52.9 +/- 6.6 W m^-1 K^-1 for high-quality (002) r-GeO2 films grown by metal-organic chemical vapor deposition (MOCVD) and characterized using time-domain thermoreflectance (TDTR). The phase control was achieved through a seed-driven stepwise crystallization (SDSC) approach, and the surface roughness was significantly reduced from 76 nm to 16 nm (locally as low as 1 A) via chemical mechanical polishing (CMP). These results highlight the promise of r-GeO2 as a UWBG oxide platform for power electronics applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2510_27228 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High thermal conductivity of rutile-GeO$_2$ films grown by MOCVD: $52.9~\mathrm{W\,m^{-1}\,K^{-1}}$ Rahaman, Imteaz Liao, Michael E. Wang, Ziqi Kwon, Eugene Y. Sun, Rui Li, Botong Ellis, Hunter D. Duersch, Bobby G. Sun, Dali Liu, Jun Goorsky, Mark S. Scarpulla, Michael A. Fu, Kai Materials Science Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, and high theoretical thermal conductivity. However, experimental data on the thermal conductivity of r-GeO2 epitaxial layers have not been reported, primarily due to challenges in phase control and surface roughness. Here, we report a high thermal conductivity of 52.9 +/- 6.6 W m^-1 K^-1 for high-quality (002) r-GeO2 films grown by metal-organic chemical vapor deposition (MOCVD) and characterized using time-domain thermoreflectance (TDTR). The phase control was achieved through a seed-driven stepwise crystallization (SDSC) approach, and the surface roughness was significantly reduced from 76 nm to 16 nm (locally as low as 1 A) via chemical mechanical polishing (CMP). These results highlight the promise of r-GeO2 as a UWBG oxide platform for power electronics applications. |
| title | High thermal conductivity of rutile-GeO$_2$ films grown by MOCVD: $52.9~\mathrm{W\,m^{-1}\,K^{-1}}$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2510.27228 |