Copertina

High thermal conductivity of rutile-GeO$_2$ films grown by MOCVD: $52.9~\mathrm{W\,m^{-1}\,K^{-1}}$

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Rahaman, Imteaz, Liao, Michael E., Wang, Ziqi, Kwon, Eugene Y., Sun, Rui, Li, Botong, Ellis, Hunter D., Duersch, Bobby G., Sun, Dali, Liu, Jun, Goorsky, Mark S., Scarpulla, Michael A., Fu, Kai
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Epitaxial Growth of Rutile GeO$_2$ via MOCVD
di: Rahaman, Imteaz, et al.
Pubblicazione: (2024)

Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD
di: Rahaman, Imteaz, et al.
Pubblicazione: (2024)

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO$_2$ Films Grown by MOCVD on r- and c-Plane Sapphires
di: Li, Botong, et al.
Pubblicazione: (2025)

Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD
di: Rahaman, Imteaz, et al.
Pubblicazione: (2025)

Growth of GeO2 on R-plane and C-plane Sapphires by MOCVD
di: Rahaman, Imteaz, et al.
Pubblicazione: (2024)

Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films
di: Rahaman, Imteaz, et al.
Pubblicazione: (2025)

A TEM Study of MOCVD-Grown Rutile GeO2 Films
di: Rahaman, Imteaz, et al.
Pubblicazione: (2024)

Crystallinity Evolution of MOCVD-Grown $β$-Ga$_2$O$_3$ Films Probed by In Situ HT-XRD under Different Reactor Heights
di: Rahaman, Imteaz, et al.
Pubblicazione: (2026)

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C
di: Ellis, Hunter, et al.
Pubblicazione: (2025)

In Situ Study of p‐NiO Film Quality at High Temperatures up to 1100°C
di: Hunter Ellis, et al.
Pubblicazione: (2026)

Thermal Stability and Phase Transformation of Conductive $α$-$(\mathrm{Al}_{x}\mathrm{Ga}_{1-x})_{2}\mathrm{O}_{3}/\mathrm{Ga}_{2}\mathrm{O}_{3}$ Heterostructures on Sapphire Substrates
di: Li, Botong, et al.
Pubblicazione: (2026)

Degradation of 2.4-kV $Ga_{2}O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 °C
di: Ellis, Hunter, et al.
Pubblicazione: (2025)

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C
di: Li, Botong, et al.
Pubblicazione: (2025)

$β$-Ga$_2$O$_3$--Based Radiation Detector for Proton Therapy
di: Ellis, Hunter D., et al.
Pubblicazione: (2025)

Carbon-Nanotube/$β$-Ga$_2$O$_3$ Heterojunction PIN Diodes
di: Ellis, Hunter D., et al.
Pubblicazione: (2025)

Dosimetry for Proton Therapy Using a β-Ga$_2$O$_3$ Metal-Semiconductor-Metal Detector with Low-Noise Amplification
di: Ellis, Hunter D., et al.
Pubblicazione: (2026)

Ground-states of the Shastry-Sutherland Lattice Materials Gd$_2$Be$_2$GeO$_7$ and Dy$_2$Be$_2$GeO$_7$
di: Pula, M., et al.
Pubblicazione: (2025)

Bimetallic Pd-Pt films prepared by MOCVD
di: R. Martinez Guerrero
Pubblicazione: (2007)

High‐Performance Monolayer 1T‐GeO 2 Transistors with Low‐Resistance Metal Contacts
di: Shuai Lang, et al.
Pubblicazione: (2025)

Nanoparticle Deposition Techniques for Silica Nanoparticles: Synthesis, Electrophoretic Deposition, and Optimization- A review
di: Karmakar, Srabani, et al.
Pubblicazione: (2025)

Optimizing Flux Method Growth of Rutile GeO2 Crystals
di: Ansbro, Avery-Ryan, et al.
Pubblicazione: (2026)

Magnetoelectric training of multiferroic domains in Mn$_2$GeO$_4$
di: Leo, Naëmi, et al.
Pubblicazione: (2025)

Lattice Dynamics of Rutile Germanium Dioxide (r‐GeO 2 )
di: Hans Tornatzky, et al.
Pubblicazione: (2026)

Raman and Hall characterization of AlGaAs epilayers grown by MOCVD using elemental arsenic
di: J. Díaz Reyes
Pubblicazione: (2002)

Bulk Rutile‐GeO 2 Single Crystals and Epi‐Ready Wafers
di: Zbigniew Galazka, et al.
Pubblicazione: (2026)

Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD
di: J. Díaz-Reyes
Pubblicazione: (2010)

Unveiling an in-plane Hall effect in rutile RuO$_2$ films
di: Wang, Meng, et al.
Pubblicazione: (2025)

Investigation of Ga interstitial and vacancy diffusion in $β$-Ga$_2$O$_3$ via split defects: a direct approach via master diffusion equations
di: Lee, Channyung, et al.
Pubblicazione: (2024)

When Are Capacitance–Voltage, Drive‐Level Capacitance Profiling, and Fast‐CV Actually Insensitive to Interface and Bulk Defects?
di: Lorenzo Perini, et al.
Pubblicazione: (2026)

Optical and electrical characterization of AlxGa1−xAs layers grown on GaAs obtained by a metallic-arsenic-based-MOCVD system
di: J. Díaz-Reyes
Pubblicazione: (2007)

Thermodynamic and electronic properties of rutile Sn$_{1-x}$Ge$_x$O$_2$ alloys from first principles
di: Müller, Yann L., et al.
Pubblicazione: (2026)

Structural modifications of GeO$_2$ glass under high pressure and high temperature
di: Cornet, Antoine, et al.
Pubblicazione: (2024)

Coupled sawtooth chain exchange network in olivine Mn$_2$GeO$_4$
di: Morano, Vincent C., et al.
Pubblicazione: (2026)

In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
di: Chen, Wenshan, et al.
Pubblicazione: (2023)

Growth and characterization of Ge1-xSnx alloys grown on Ge(001) and GaAs(001)
di: Vanesa Naar Osorio
Pubblicazione: (2004)

Structure and magnetism of MnGe thin films grown with a nonmagnetic CrSi template
di: MacNeil, B. D., et al.
Pubblicazione: (2025)

First principles study on the oxidation resistance of two-dimensional intrinsic and defective GeO2
di: Zhang, Xixiang, et al.
Pubblicazione: (2025)

Quantification of the strong, phonon-induced Urbach tails in \b{eta}-Ga2O3 and their implications on electrical breakdown
di: Islam, Ariful, et al.
Pubblicazione: (2024)

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
di: Cardinael, Pieter, et al.
Pubblicazione: (2024)

Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
di: Chen, Wenshan, et al.
Pubblicazione: (2024)