Low-Frequency Noise and Resistive Switching in $β$-Na$_{0.33}$V$_2$O$_5$
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| Format: | Preprint |
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2025
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| _version_ | 1866912695307993088 |
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| author | Kumar, Nitin Jerla, Nicholas Ponis, John Banerjee, Sarbajit Sambandamurthy, G. |
| author_facet | Kumar, Nitin Jerla, Nicholas Ponis, John Banerjee, Sarbajit Sambandamurthy, G. |
| contents | The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport and switching behavior of single-crystalline $β$-Na$_{0.33}$V$_2$O$_5$, focusing on low-frequency resistance noise dynamics of charge-order-driven resistive switching. Using electrical transport, low frequency noise spectroscopy, and X-ray diffraction, we probe electron dynamics across the Na-ion-ordering (IO) and charge-ordering (CO) transitions. Near room temperature, the weak temperature dependence of the noise spectral density points to a dominance of nearest-neighbor polaron hopping. Below IO transition temperature (\( T_{IO} \sim 240 \, \text{K} \)), structural analysis reveals that Na-ions adopt a zig-zag occupancy pattern, breaking the two-fold rotational symmetry and influencing the electronic ground state. Subsequently, a sharp drop in resistance noise below the CO transition temperature (\( T_{CO} \sim 125 \, \text{K} \)) indicates the emergence of correlated electron behavior. Furthermore, application of sufficient electric field leads to the destabilization of the CO state, and a transition to a high-conducting state. The material exhibits distinct resistive switching between 35~K and 110~K, with a resistance change spanning two orders of magnitude, primarily driven by electronic mechanisms rather than Joule heating. These findings provide new insights into charge-order-induced switching and electronic correlations in quasi-one-dimensional systems, with potential applications in cryogenic memory and neuromorphic computing devices owing to the low noise levels in their stable resistive states. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2511_00376 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Low-Frequency Noise and Resistive Switching in $β$-Na$_{0.33}$V$_2$O$_5$ Kumar, Nitin Jerla, Nicholas Ponis, John Banerjee, Sarbajit Sambandamurthy, G. Strongly Correlated Electrons The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport and switching behavior of single-crystalline $β$-Na$_{0.33}$V$_2$O$_5$, focusing on low-frequency resistance noise dynamics of charge-order-driven resistive switching. Using electrical transport, low frequency noise spectroscopy, and X-ray diffraction, we probe electron dynamics across the Na-ion-ordering (IO) and charge-ordering (CO) transitions. Near room temperature, the weak temperature dependence of the noise spectral density points to a dominance of nearest-neighbor polaron hopping. Below IO transition temperature (\( T_{IO} \sim 240 \, \text{K} \)), structural analysis reveals that Na-ions adopt a zig-zag occupancy pattern, breaking the two-fold rotational symmetry and influencing the electronic ground state. Subsequently, a sharp drop in resistance noise below the CO transition temperature (\( T_{CO} \sim 125 \, \text{K} \)) indicates the emergence of correlated electron behavior. Furthermore, application of sufficient electric field leads to the destabilization of the CO state, and a transition to a high-conducting state. The material exhibits distinct resistive switching between 35~K and 110~K, with a resistance change spanning two orders of magnitude, primarily driven by electronic mechanisms rather than Joule heating. These findings provide new insights into charge-order-induced switching and electronic correlations in quasi-one-dimensional systems, with potential applications in cryogenic memory and neuromorphic computing devices owing to the low noise levels in their stable resistive states. |
| title | Low-Frequency Noise and Resistive Switching in $β$-Na$_{0.33}$V$_2$O$_5$ |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2511.00376 |