Tuning the Electronic Structure of Graphene by Controlling Spatial Confinement

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Bazrafshan, Mohammadamir, Kühne, Thomas. D.
Formato: Preprint
Publicado: 2025
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866912851044597760
author Bazrafshan, Mohammadamir
Kühne, Thomas. D.
author_facet Bazrafshan, Mohammadamir
Kühne, Thomas. D.
contents The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely high electronic conductivity. Nevertheless, graphene ribbons can have different physical properties, such as a tunable band gap, ranging from gapless to a large band gap semiconductor. The purpose of this study is to investigate the electronic structure of few-layer graphene composed of a layer of graphene nanoribbons and graphene sheet(s), where quasi-one-dimensional nanoribbons can interact with a two-dimensional sheet of graphite. Using the tight-binding model for graphite, we show how different configurations of such heterostructures can affect the electronic structure, which is different from that of their components. Our results show that systems composed of semiconducting AGNRs can not be seen as two separate systems. Namely, a local gap of ~0.6 eV at the Dirac point for dispersive bands can be opened in a bilayer configuration composed of a layer of gapless armchair nanoribbon stacked on graphene. We demonstrate that the band steepness in these structures can be tuned, highlighting their potential for electronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2511_00688
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Tuning the Electronic Structure of Graphene by Controlling Spatial Confinement
Bazrafshan, Mohammadamir
Kühne, Thomas. D.
Mesoscale and Nanoscale Physics
Materials Science
The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely high electronic conductivity. Nevertheless, graphene ribbons can have different physical properties, such as a tunable band gap, ranging from gapless to a large band gap semiconductor. The purpose of this study is to investigate the electronic structure of few-layer graphene composed of a layer of graphene nanoribbons and graphene sheet(s), where quasi-one-dimensional nanoribbons can interact with a two-dimensional sheet of graphite. Using the tight-binding model for graphite, we show how different configurations of such heterostructures can affect the electronic structure, which is different from that of their components. Our results show that systems composed of semiconducting AGNRs can not be seen as two separate systems. Namely, a local gap of ~0.6 eV at the Dirac point for dispersive bands can be opened in a bilayer configuration composed of a layer of gapless armchair nanoribbon stacked on graphene. We demonstrate that the band steepness in these structures can be tuned, highlighting their potential for electronic applications.
title Tuning the Electronic Structure of Graphene by Controlling Spatial Confinement
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2511.00688