SOI-Compatible Degenerate Band Edge Photonic Structure: Design Rules and Robustness Analysis
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arXiv
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| Hauptverfasser: | , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| _version_ | 1866910061044957184 |
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| author | Abramovich, Kessem Zamir Scheuer, Jacob |
| author_facet | Abramovich, Kessem Zamir Scheuer, Jacob |
| contents | Optical periodic structures exhibiting a degenerate band edge (DBE) are of significant interest for various applications such as switching, sensing, high-power amplification, and lasing. At the edge of the bandgap in such structures, a fourth-order exceptional point degeneracy arises, leading to an extremely flat dispersion band. We propose and study a Silicon-on-Insulator-compatible structure composed of two coupled waveguides with asymmetric gratings. The dispersion relations and the field profiles are obtained using three-dimensional finite-difference time-domain simulations, and we provide a set of practical guidelines for the design and optimization of such structures, in order to obtain a DBE. We analyze the transmission and reflection spectra of finite-size devices, and investigate their spectral properties near the stationary points. The scaling of the resonance quality factor with the number of unit cells is studied, revealing a performance that surpasses that of conventional periodic structures. Finally, we examine the robustness of the DBE with respect to fabrication tolerances and structural imperfections. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_01475 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | SOI-Compatible Degenerate Band Edge Photonic Structure: Design Rules and Robustness Analysis Abramovich, Kessem Zamir Scheuer, Jacob Optics Optical periodic structures exhibiting a degenerate band edge (DBE) are of significant interest for various applications such as switching, sensing, high-power amplification, and lasing. At the edge of the bandgap in such structures, a fourth-order exceptional point degeneracy arises, leading to an extremely flat dispersion band. We propose and study a Silicon-on-Insulator-compatible structure composed of two coupled waveguides with asymmetric gratings. The dispersion relations and the field profiles are obtained using three-dimensional finite-difference time-domain simulations, and we provide a set of practical guidelines for the design and optimization of such structures, in order to obtain a DBE. We analyze the transmission and reflection spectra of finite-size devices, and investigate their spectral properties near the stationary points. The scaling of the resonance quality factor with the number of unit cells is studied, revealing a performance that surpasses that of conventional periodic structures. Finally, we examine the robustness of the DBE with respect to fabrication tolerances and structural imperfections. |
| title | SOI-Compatible Degenerate Band Edge Photonic Structure: Design Rules and Robustness Analysis |
| topic | Optics |
| url | https://arxiv.org/abs/2511.01475 |