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A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Asteris, Aias, Nguyen, Thai-Son, Xing, Huili Grace, Jena, Debdeep
Format:	Preprint
Publié:	2025
Sujets:	Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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