Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911247877799936 |
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| author | Daoust, P. Rotaru, N. Biswas, D. Koelling, S. Rahier, E. Dubé-Valade, A. Del Vecchio, P. Edwards, M. S. Tanvir, M. Sajadi, E. Salfi, J. Moutanabbir, O. |
| author_facet | Daoust, P. Rotaru, N. Biswas, D. Koelling, S. Rahier, E. Dubé-Valade, A. Del Vecchio, P. Edwards, M. S. Tanvir, M. Sajadi, E. Salfi, J. Moutanabbir, O. |
| contents | The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing these nuclear spin-full isotopes is essential to extend the hyperfine-limited coherence times needed to implement robust quantum processors. This work demonstrates the epitaxial growth of device-grade nuclear spin-free 70Ge/28Si70Ge heterostructures on industrial SiGe buffers while minimizing the amounts of highly purified 70GeH4 and 28SiH4 used. The obtained 70Ge/28Si70Ge heterostructures exhibit a dislocation density of 5.3 x 10e6 cm-2 and an isotopic purity exceeding 99.99%, with carbon and oxygen impurities below the detection sensitivity, as revealed by atom probe tomography. Magnetotransport measurements on gated Hall bars demonstrate effective gate control of hole density in nuclear spin-free quantum wells. Negative threshold gate voltages confirm the absence of intentional doping in the wells, while Hall and Shubnikov-de Haas analyses yield consistent carrier densities (1.4 x 10e11 cm-2) and high mobilities (2.4 x 10e5 cm2/Vs). Mobility trends reveal interfacetrap- limited scattering and percolation concentration below 7 x 10e10 cm-2. These analyses, along with atomic-level studies, confirm the high quality of epitaxial 70Ge/28Si70Ge heterostructures and their relevance as a platform for long-coherence spin qubits. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2511_01916 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers Daoust, P. Rotaru, N. Biswas, D. Koelling, S. Rahier, E. Dubé-Valade, A. Del Vecchio, P. Edwards, M. S. Tanvir, M. Sajadi, E. Salfi, J. Moutanabbir, O. Materials Science Mesoscale and Nanoscale Physics Applied Physics The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing these nuclear spin-full isotopes is essential to extend the hyperfine-limited coherence times needed to implement robust quantum processors. This work demonstrates the epitaxial growth of device-grade nuclear spin-free 70Ge/28Si70Ge heterostructures on industrial SiGe buffers while minimizing the amounts of highly purified 70GeH4 and 28SiH4 used. The obtained 70Ge/28Si70Ge heterostructures exhibit a dislocation density of 5.3 x 10e6 cm-2 and an isotopic purity exceeding 99.99%, with carbon and oxygen impurities below the detection sensitivity, as revealed by atom probe tomography. Magnetotransport measurements on gated Hall bars demonstrate effective gate control of hole density in nuclear spin-free quantum wells. Negative threshold gate voltages confirm the absence of intentional doping in the wells, while Hall and Shubnikov-de Haas analyses yield consistent carrier densities (1.4 x 10e11 cm-2) and high mobilities (2.4 x 10e5 cm2/Vs). Mobility trends reveal interfacetrap- limited scattering and percolation concentration below 7 x 10e10 cm-2. These analyses, along with atomic-level studies, confirm the high quality of epitaxial 70Ge/28Si70Ge heterostructures and their relevance as a platform for long-coherence spin qubits. |
| title | Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2511.01916 |