$C_{3}$-Symmetry-induced Antisymmetric Planar Hall effect and Magnetoresistance in Single-Crystalline Ferromagnets
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866917106181734400 |
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| author | Qin, W. J. Yang, B. Tian, Y. Z. Zheng, B. W. Wang, K. Y. Huang, B. Y. Yang, Y. B. Zou, W. Q. Wu, D. Wang, P. |
| author_facet | Qin, W. J. Yang, B. Tian, Y. Z. Zheng, B. W. Wang, K. Y. Huang, B. Y. Yang, Y. B. Zou, W. Q. Wu, D. Wang, P. |
| contents | The planar Hall effect (PHE) is typically symmetric under magnetic field reversal, as required by the Onsager reciprocity relations. Recent advances have identified the antisymmetric PHE (under magnetic field reversal) as an intriguing extension in magnetic systems. While new mechanisms have been proposed, the role of conventional anisotropic magnetoresistance (AMR) in this phenomenon remains unclear. Here, we report the experimental discovery of an antisymmetric (with respect to both magnetic field and magnetization) PHE and magnetoresistance in single-crystal $Co_{30}Pt_{70}$ (111) thin films with $C_{3}$ rotational symmetry and perpendicular magnetic anisotropy (PMA). We demonstrate that both antisymmetric effects arise naturally from the intrinsic fourth-rank AMR tensor inherent to C3-symmetric planes, assisted by PMA. Our findings link conventional AMR to antisymmetric galvanomagnetic responses, offering new insights into symmetry-governed transport in crystalline ferromagnets. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_02319 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | $C_{3}$-Symmetry-induced Antisymmetric Planar Hall effect and Magnetoresistance in Single-Crystalline Ferromagnets Qin, W. J. Yang, B. Tian, Y. Z. Zheng, B. W. Wang, K. Y. Huang, B. Y. Yang, Y. B. Zou, W. Q. Wu, D. Wang, P. Materials Science The planar Hall effect (PHE) is typically symmetric under magnetic field reversal, as required by the Onsager reciprocity relations. Recent advances have identified the antisymmetric PHE (under magnetic field reversal) as an intriguing extension in magnetic systems. While new mechanisms have been proposed, the role of conventional anisotropic magnetoresistance (AMR) in this phenomenon remains unclear. Here, we report the experimental discovery of an antisymmetric (with respect to both magnetic field and magnetization) PHE and magnetoresistance in single-crystal $Co_{30}Pt_{70}$ (111) thin films with $C_{3}$ rotational symmetry and perpendicular magnetic anisotropy (PMA). We demonstrate that both antisymmetric effects arise naturally from the intrinsic fourth-rank AMR tensor inherent to C3-symmetric planes, assisted by PMA. Our findings link conventional AMR to antisymmetric galvanomagnetic responses, offering new insights into symmetry-governed transport in crystalline ferromagnets. |
| title | $C_{3}$-Symmetry-induced Antisymmetric Planar Hall effect and Magnetoresistance in Single-Crystalline Ferromagnets |
| topic | Materials Science |
| url | https://arxiv.org/abs/2511.02319 |