Single-particle detection of a semiconductor-to-metal transition by scanning dielectric microscopy

Fuente: arXiv
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Main Authors: Millan-Solsona, Ruben, Ruiz-Torres, José A., Moya, Carlos, Rodríguez, Arantxa Fraile, Figueroa, Adriana I., Gomila, Gabriel, Labarta, Amílcar, Batlle, Xavier
Format: Preprint
Published: 2025
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author Millan-Solsona, Ruben
Ruiz-Torres, José A.
Moya, Carlos
Rodríguez, Arantxa Fraile
Figueroa, Adriana I.
Gomila, Gabriel
Labarta, Amílcar
Batlle, Xavier
author_facet Millan-Solsona, Ruben
Ruiz-Torres, José A.
Moya, Carlos
Rodríguez, Arantxa Fraile
Figueroa, Adriana I.
Gomila, Gabriel
Labarta, Amílcar
Batlle, Xavier
contents Hybrid nanostructures that combine semiconducting and metallic components offer great potential for photothermal therapy, optoelectronics, and sensing, by integrating tunable optical properties with enhanced light absorption and charge transport. Boosting the integrated performance of these hybrid systems demands techniques capable of probing local variations of the physical properties inaccessible to bulk analysis. Here, we report the single-particle dielectric characterization of hybrid, semiconducting bismuth sulfide (Bi$_2$S$_3$) nanorods (NR) decorated with metallic Au nanoparticles (NP), employing scanning dielectric microscopy, which uses electrostatic force microscopy in combination with finite-element numerical simulations. We reveal a pronounced enhancement in the local dielectric response of Bi$_2$S$_3$ upon Au decoration, attributed to interfacial polarization and electron transfer from Au to the Bi$_2$S$_3$ matrix, thus suggesting a semiconductor-to-metal-like transition at the single-particle level. Numerical simulations show that the response is dominated by the vertical component of the permittivity and that the decorating metallic Au NP produce only moderate shielding of the semiconductor Bi$_2$S$_3$ NR core, indicating that the large increase in the dielectric response originates primarily from intrinsic modifications within the NR. Overall, these findings provide direct insight into structure--property relationships at the single-particle level, supporting the rational design of advanced hybrid nanostructures with tailored electronic functionalities.
format Preprint
id arxiv_https___arxiv_org_abs_2511_02545
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Single-particle detection of a semiconductor-to-metal transition by scanning dielectric microscopy
Millan-Solsona, Ruben
Ruiz-Torres, José A.
Moya, Carlos
Rodríguez, Arantxa Fraile
Figueroa, Adriana I.
Gomila, Gabriel
Labarta, Amílcar
Batlle, Xavier
Chemical Physics
Hybrid nanostructures that combine semiconducting and metallic components offer great potential for photothermal therapy, optoelectronics, and sensing, by integrating tunable optical properties with enhanced light absorption and charge transport. Boosting the integrated performance of these hybrid systems demands techniques capable of probing local variations of the physical properties inaccessible to bulk analysis. Here, we report the single-particle dielectric characterization of hybrid, semiconducting bismuth sulfide (Bi$_2$S$_3$) nanorods (NR) decorated with metallic Au nanoparticles (NP), employing scanning dielectric microscopy, which uses electrostatic force microscopy in combination with finite-element numerical simulations. We reveal a pronounced enhancement in the local dielectric response of Bi$_2$S$_3$ upon Au decoration, attributed to interfacial polarization and electron transfer from Au to the Bi$_2$S$_3$ matrix, thus suggesting a semiconductor-to-metal-like transition at the single-particle level. Numerical simulations show that the response is dominated by the vertical component of the permittivity and that the decorating metallic Au NP produce only moderate shielding of the semiconductor Bi$_2$S$_3$ NR core, indicating that the large increase in the dielectric response originates primarily from intrinsic modifications within the NR. Overall, these findings provide direct insight into structure--property relationships at the single-particle level, supporting the rational design of advanced hybrid nanostructures with tailored electronic functionalities.
title Single-particle detection of a semiconductor-to-metal transition by scanning dielectric microscopy
topic Chemical Physics
url https://arxiv.org/abs/2511.02545