Electron and hole $g$ factors in semiconductors and nanostructures (Review)

Fuente: arXiv
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Hauptverfasser: Rodina, A. V., Semina, M. A., Ivchenko, E. L.
Format: Preprint
Veröffentlicht: 2025
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author Rodina, A. V.
Semina, M. A.
Ivchenko, E. L.
author_facet Rodina, A. V.
Semina, M. A.
Ivchenko, E. L.
contents We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized by the magnitude of the electron or hole g factor. Various experimental methods for measuring the electron g factor are considered, beginning with historical works and including modern research. A detailed analysis of theoretical methods for calculating the electron and hole g factors in bulk semiconductors and nanostructures of various shapes also includes fundamental work from previous years and the present time.
format Preprint
id arxiv_https___arxiv_org_abs_2511_02956
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electron and hole $g$ factors in semiconductors and nanostructures (Review)
Rodina, A. V.
Semina, M. A.
Ivchenko, E. L.
Materials Science
We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized by the magnitude of the electron or hole g factor. Various experimental methods for measuring the electron g factor are considered, beginning with historical works and including modern research. A detailed analysis of theoretical methods for calculating the electron and hole g factors in bulk semiconductors and nanostructures of various shapes also includes fundamental work from previous years and the present time.
title Electron and hole $g$ factors in semiconductors and nanostructures (Review)
topic Materials Science
url https://arxiv.org/abs/2511.02956