Contactless Modulation of Intralayer and Interlayer Excitons in MoS2/WSe2 heterostructures with Acoustoelectric Fields

Fuente: arXiv
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Main Authors: Sun, Yueyi, Liu, Dexing, Zhu, Jiefei, Liu, Siming, Chen, Jiwei, Luo, Yingjie, Sun, Yihong, Chan, Mansun, Yang, Cary. Y., Zhou, Taojie, Zhang, Min, Zhou, Changjian
Format: Preprint
Published: 2025
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author Sun, Yueyi
Liu, Dexing
Zhu, Jiefei
Liu, Siming
Chen, Jiwei
Luo, Yingjie
Sun, Yihong
Chan, Mansun
Yang, Cary. Y.
Zhou, Taojie
Zhang, Min
Zhou, Changjian
author_facet Sun, Yueyi
Liu, Dexing
Zhu, Jiefei
Liu, Siming
Chen, Jiwei
Luo, Yingjie
Sun, Yihong
Chan, Mansun
Yang, Cary. Y.
Zhou, Taojie
Zhang, Min
Zhou, Changjian
contents This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS2/WSe2 heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties, a capability essential for the realization of next generation optoelectronic, quantum photonic, and excitonic devices. We identify two distinct modulable interlayer excitons in optical communication bands: IX$_{KΓ}$ in the O band (around 1300 nm) and IX$_{K\!-\!K}$ in the S band (around 1500 nm); these two excitons display a robust twist-angle-independent energy splitting of 120 meV, in agreement with density functional theory (DFT) calculations. The type-II band alignment induced by the SAW not only promotes efficient exciton dissociation but also enables direct and tunable modulation of photoluminescence via the formation of confined piezoelectric potential wells. Furthermore, by simultaneously generating in-plane and out-of-plane SAW fields, the platform achieves selective manipulation of intralayer and interlayer excitons, inducing quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons. These findings provide new insights into SAWexciton interactions in van der Waals heterostructures, broaden the operational spectral range, and establish pathways toward on-chip acousto-optic and quantum optoelectronic devices with advanced excitonic functionality.
format Preprint
id arxiv_https___arxiv_org_abs_2511_03301
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Contactless Modulation of Intralayer and Interlayer Excitons in MoS2/WSe2 heterostructures with Acoustoelectric Fields
Sun, Yueyi
Liu, Dexing
Zhu, Jiefei
Liu, Siming
Chen, Jiwei
Luo, Yingjie
Sun, Yihong
Chan, Mansun
Yang, Cary. Y.
Zhou, Taojie
Zhang, Min
Zhou, Changjian
Optics
This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS2/WSe2 heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated approach allows for dynamic, precise, and fully contactless control of excitonic properties, a capability essential for the realization of next generation optoelectronic, quantum photonic, and excitonic devices. We identify two distinct modulable interlayer excitons in optical communication bands: IX$_{KΓ}$ in the O band (around 1300 nm) and IX$_{K\!-\!K}$ in the S band (around 1500 nm); these two excitons display a robust twist-angle-independent energy splitting of 120 meV, in agreement with density functional theory (DFT) calculations. The type-II band alignment induced by the SAW not only promotes efficient exciton dissociation but also enables direct and tunable modulation of photoluminescence via the formation of confined piezoelectric potential wells. Furthermore, by simultaneously generating in-plane and out-of-plane SAW fields, the platform achieves selective manipulation of intralayer and interlayer excitons, inducing quadratic Stark effects for intralayer excitons and linear Stark effects for interlayer excitons. These findings provide new insights into SAWexciton interactions in van der Waals heterostructures, broaden the operational spectral range, and establish pathways toward on-chip acousto-optic and quantum optoelectronic devices with advanced excitonic functionality.
title Contactless Modulation of Intralayer and Interlayer Excitons in MoS2/WSe2 heterostructures with Acoustoelectric Fields
topic Optics
url https://arxiv.org/abs/2511.03301