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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2511.03321 |
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| _version_ | 1866908630098378752 |
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| author | Boiko, D. L. Demolon, P. Carlin, J. -F. Eriksson, E. Hoogerwerf, A. Gravesen, K. Bach Gardner, A. Brimnes Dubois, M. -A. Tønning, P. Ulsig, E. Zanchetta Marin, M. Tingsborg, J. Volet, N. |
| author_facet | Boiko, D. L. Demolon, P. Carlin, J. -F. Eriksson, E. Hoogerwerf, A. Gravesen, K. Bach Gardner, A. Brimnes Dubois, M. -A. Tønning, P. Ulsig, E. Zanchetta Marin, M. Tingsborg, J. Volet, N. |
| contents | We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We investigate the behavior of a Shockley-Read-Hall recombination via Al vacancies-oxygen complexes in AlN barriers as a function of GaN well thickness and come to the conclusion that direct relaxation of confined states via mid-gap traps is prohibited and the main mechanism limiting the quantum efficiency (QE) is the carrier escape followed by non-radiative SRH recombination in the AlN barriers. As a consequence, the QE is highly dependent on the defect density, QW width and temperature which allowed us to reach a descent emissions at 226 nm wavelength although at wall plug efficiency being low, at 0.02%. We build a complete Light-Current-Voltage model and find that present device performance is limited by the self-heating and by the Child's space charge effect, both limitations can be easily addressed with some additional engineering efforts. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_03321 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode Boiko, D. L. Demolon, P. Carlin, J. -F. Eriksson, E. Hoogerwerf, A. Gravesen, K. Bach Gardner, A. Brimnes Dubois, M. -A. Tønning, P. Ulsig, E. Zanchetta Marin, M. Tingsborg, J. Volet, N. Optics Applied Physics We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We investigate the behavior of a Shockley-Read-Hall recombination via Al vacancies-oxygen complexes in AlN barriers as a function of GaN well thickness and come to the conclusion that direct relaxation of confined states via mid-gap traps is prohibited and the main mechanism limiting the quantum efficiency (QE) is the carrier escape followed by non-radiative SRH recombination in the AlN barriers. As a consequence, the QE is highly dependent on the defect density, QW width and temperature which allowed us to reach a descent emissions at 226 nm wavelength although at wall plug efficiency being low, at 0.02%. We build a complete Light-Current-Voltage model and find that present device performance is limited by the self-heating and by the Child's space charge effect, both limitations can be easily addressed with some additional engineering efforts. |
| title | Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2511.03321 |