Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal

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Hauptverfasser: Khisameeva, A. R., Shuvaev, A., Moiseenko, I. M., Gusikhin, P. A., Astrakhantseva, A. S., Pimenov, A., Svintsov, D. A., Kukushkin, I. V., Muravev, V. M.
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Veröffentlicht: 2025
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author Khisameeva, A. R.
Shuvaev, A.
Moiseenko, I. M.
Gusikhin, P. A.
Astrakhantseva, A. S.
Pimenov, A.
Svintsov, D. A.
Kukushkin, I. V.
Muravev, V. M.
author_facet Khisameeva, A. R.
Shuvaev, A.
Moiseenko, I. M.
Gusikhin, P. A.
Astrakhantseva, A. S.
Pimenov, A.
Svintsov, D. A.
Kukushkin, I. V.
Muravev, V. M.
contents We experimentally investigate the terahertz spectrum of plasma excitations in a plasmonic crystal based on AlGaN/GaN two-dimensional electron system (2DES). While screened plasmon modes with linear dispersion are readily observed in the plasmonic crystals, the existence of unscreened modes localized in the slots between the gates has remained unobserved until now. We discover this slot plasma excitation exhibiting square-root dispersion. It turned out that these slot plasmons follow an unconventional wave-vector quantization rule, $q_u=(N + 1/4) \times π/l_u$ for even integers $N$, and require the condition for excitation $q_u h \ll 1$, where $h$ is the gate-to-2DES distance and $l_u$ is the slot width. We develop an analytical model that accurately captures the found dispersion and relaxation, revealing a non-trivial $-π/4$ phase shift upon plasmon reflection at the gate edge. Experiments demonstrate that the slot plasmons persist up to room temperature, thereby enabling a broad range of opportunities for the advancement of plasmonic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2511_03450
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
Khisameeva, A. R.
Shuvaev, A.
Moiseenko, I. M.
Gusikhin, P. A.
Astrakhantseva, A. S.
Pimenov, A.
Svintsov, D. A.
Kukushkin, I. V.
Muravev, V. M.
Mesoscale and Nanoscale Physics
We experimentally investigate the terahertz spectrum of plasma excitations in a plasmonic crystal based on AlGaN/GaN two-dimensional electron system (2DES). While screened plasmon modes with linear dispersion are readily observed in the plasmonic crystals, the existence of unscreened modes localized in the slots between the gates has remained unobserved until now. We discover this slot plasma excitation exhibiting square-root dispersion. It turned out that these slot plasmons follow an unconventional wave-vector quantization rule, $q_u=(N + 1/4) \times π/l_u$ for even integers $N$, and require the condition for excitation $q_u h \ll 1$, where $h$ is the gate-to-2DES distance and $l_u$ is the slot width. We develop an analytical model that accurately captures the found dispersion and relaxation, revealing a non-trivial $-π/4$ phase shift upon plasmon reflection at the gate edge. Experiments demonstrate that the slot plasmons persist up to room temperature, thereby enabling a broad range of opportunities for the advancement of plasmonic devices.
title Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2511.03450