Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures

Fuente: arXiv
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Bibliographic Details
Main Authors: Belevskii, P. A., Vinoslavskii, M. N., Pylypchuk, O. S.
Format: Preprint
Published: 2025
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