Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures
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arXiv
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866914139152056320 |
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| author | Belevskii, P. A. Vinoslavskii, M. N. Pylypchuk, O. S. |
| author_facet | Belevskii, P. A. Vinoslavskii, M. N. Pylypchuk, O. S. |
| contents | There has been experimentally implemented a technique of neutralization of an acoustoelectric domain under the conditions of the lateral transport of charge carriers in strong electric fields in the multilayer InGaAs/GaAs heterostructures with quantum wells. The technique is implemented by means of deposition of a shunting semi opaque silver film on the heterostructure surface between the ohmic contacts. In absence of shunting the domain appearance leads to current decrease, current oscillations and also to a strong decrease of the band-to-band emission during a voltage pulse applied to the sample. The shunting eliminated the current decrease and enabled it to strongly enlarge the band-to-band emission intensity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2511_03621 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures Belevskii, P. A. Vinoslavskii, M. N. Pylypchuk, O. S. Mesoscale and Nanoscale Physics There has been experimentally implemented a technique of neutralization of an acoustoelectric domain under the conditions of the lateral transport of charge carriers in strong electric fields in the multilayer InGaAs/GaAs heterostructures with quantum wells. The technique is implemented by means of deposition of a shunting semi opaque silver film on the heterostructure surface between the ohmic contacts. In absence of shunting the domain appearance leads to current decrease, current oscillations and also to a strong decrease of the band-to-band emission during a voltage pulse applied to the sample. The shunting eliminated the current decrease and enabled it to strongly enlarge the band-to-band emission intensity. |
| title | Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2511.03621 |